JPS5541741A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS5541741A JPS5541741A JP11467678A JP11467678A JPS5541741A JP S5541741 A JPS5541741 A JP S5541741A JP 11467678 A JP11467678 A JP 11467678A JP 11467678 A JP11467678 A JP 11467678A JP S5541741 A JPS5541741 A JP S5541741A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- larger
- type
- clad layer
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To obtain a large, stable light output in a semiconductor laser device by providing, on a GaAs substrate, a lamination comprising a clad layer, a light guide layer, an active layer and another clad layer, each layer having a mutually regulated refractive index and a forbidden band width.
CONSTITUTION: On an n-type GaAs substrate 10, an n-type Ga1-xAlxAs clad layer 1, an n-type Ga1-yAlyAs light-guide layer 2, an undope Ga1-wAlwAs active layer 3, a p-type Ga1-vAlvAs clad layer 4 (wherein x is larger than y, v is larger than w and v is larger than y) are laminated in consecutive order and subjected to the liquid phase epitaxial growth. In this arrangement, the layer 1 has a relatively smaller refractive index than the layer 2 or 3; the width of forbidden band of the layers 4 or 2 is larger than that of the layer 3; and the difference between the widths of forbidden bands of the layers 2 and 3 is larger than 0.15eV. Thereupon, the lamination is striped and its sides are covered by an embedded Ca1-zAlzAs region 6.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11467678A JPS5541741A (en) | 1978-09-20 | 1978-09-20 | Semiconductor laser device |
NLAANVRAGE7906948,A NL184715C (en) | 1978-09-20 | 1979-09-18 | SEMICONDUCTOR LASER DEVICE. |
CA000335825A CA1147045A (en) | 1978-09-20 | 1979-09-18 | Semiconductor laser device |
GB7932463A GB2031644B (en) | 1978-09-20 | 1979-09-19 | Semiconductor laser device |
DE19792937930 DE2937930A1 (en) | 1978-09-20 | 1979-09-19 | SEMICONDUCTOR LASER ARRANGEMENT |
FR7923340A FR2437083B1 (en) | 1978-09-20 | 1979-09-19 | SEMICONDUCTOR LASER DEVICE |
US06/077,735 US4315226A (en) | 1978-09-20 | 1979-09-20 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11467678A JPS5541741A (en) | 1978-09-20 | 1978-09-20 | Semiconductor laser device |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9530681A Division JPS596079B2 (en) | 1981-06-22 | 1981-06-22 | semiconductor laser equipment |
JP23871887A Division JPS6399592A (en) | 1987-09-25 | 1987-09-25 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5541741A true JPS5541741A (en) | 1980-03-24 |
JPS6346590B2 JPS6346590B2 (en) | 1988-09-16 |
Family
ID=14643824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11467678A Granted JPS5541741A (en) | 1978-09-20 | 1978-09-20 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5541741A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55145385A (en) * | 1979-04-27 | 1980-11-12 | Nec Corp | Semiconductor light emitting element |
JPS56169386A (en) * | 1980-05-30 | 1981-12-26 | Nec Corp | Semiconductor laser |
JPS5736883A (en) * | 1980-08-13 | 1982-02-27 | Nec Corp | Semiconductor laser |
JPS5954283A (en) * | 1982-09-22 | 1984-03-29 | Agency Of Ind Science & Technol | Semiconductor laser device and manufacture thereof |
JPS60192380A (en) * | 1984-03-13 | 1985-09-30 | Mitsubishi Electric Corp | Semiconductor laser device |
JPS6399592A (en) * | 1987-09-25 | 1988-04-30 | Hitachi Ltd | Semiconductor laser device |
JPH01184981A (en) * | 1988-01-20 | 1989-07-24 | Sanyo Electric Co Ltd | Manufacture of semiconductor laser |
US5355384A (en) * | 1992-09-29 | 1994-10-11 | Mitsubishi Kasei Corporation | Semiconductor laser element |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4889687A (en) * | 1972-02-23 | 1973-11-22 | ||
JPS531482A (en) * | 1976-06-25 | 1978-01-09 | Mitsubishi Electric Corp | Semiconductor injection type laser |
-
1978
- 1978-09-20 JP JP11467678A patent/JPS5541741A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4889687A (en) * | 1972-02-23 | 1973-11-22 | ||
JPS531482A (en) * | 1976-06-25 | 1978-01-09 | Mitsubishi Electric Corp | Semiconductor injection type laser |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55145385A (en) * | 1979-04-27 | 1980-11-12 | Nec Corp | Semiconductor light emitting element |
JPS56169386A (en) * | 1980-05-30 | 1981-12-26 | Nec Corp | Semiconductor laser |
JPS5736883A (en) * | 1980-08-13 | 1982-02-27 | Nec Corp | Semiconductor laser |
JPS5954283A (en) * | 1982-09-22 | 1984-03-29 | Agency Of Ind Science & Technol | Semiconductor laser device and manufacture thereof |
JPS6354234B2 (en) * | 1982-09-22 | 1988-10-27 | Kogyo Gijutsuin | |
JPS60192380A (en) * | 1984-03-13 | 1985-09-30 | Mitsubishi Electric Corp | Semiconductor laser device |
JPS6399592A (en) * | 1987-09-25 | 1988-04-30 | Hitachi Ltd | Semiconductor laser device |
JPH01184981A (en) * | 1988-01-20 | 1989-07-24 | Sanyo Electric Co Ltd | Manufacture of semiconductor laser |
US5355384A (en) * | 1992-09-29 | 1994-10-11 | Mitsubishi Kasei Corporation | Semiconductor laser element |
Also Published As
Publication number | Publication date |
---|---|
JPS6346590B2 (en) | 1988-09-16 |
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