JPS5582473A - Semiconductor photo-receptor - Google Patents

Semiconductor photo-receptor

Info

Publication number
JPS5582473A
JPS5582473A JP15830378A JP15830378A JPS5582473A JP S5582473 A JPS5582473 A JP S5582473A JP 15830378 A JP15830378 A JP 15830378A JP 15830378 A JP15830378 A JP 15830378A JP S5582473 A JPS5582473 A JP S5582473A
Authority
JP
Japan
Prior art keywords
element layer
layer
type
region
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15830378A
Other languages
Japanese (ja)
Inventor
Kenzo Akita
Kazuo Nakajima
Yutaka Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15830378A priority Critical patent/JPS5582473A/en
Publication of JPS5582473A publication Critical patent/JPS5582473A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To receive waves in a region of long-wave length, by successively forming the first and the second four-element layers InGaAsP onto InP, by making up pn- junction between the first and the second four-element layers or in the first four- element layer, and by using the second four-element layer as a window for receiving light.
CONSTITUTION: p-Type InxGa1-xAsyP1-y(0<x<1, 0<y<1) 2 as the first four- element layer and n-type InxGa1-xAsyP1-y(0<x<1, 0<y<1) 7 as the second four-element layer are successively grown epitaxially on a p-type InP substrate 1, and pn-junction is built up between one portion of the first four-element layer 2 and a residual p-type layer 2a while employing the one portion of the layer 2 as an n- type layer 2b. The second four-element layer 7 side is made use of as a light receiving window. A reception-possible wavelength region is a range of the wavelength of λ1∼λ2 when wavelength corresponding to a band gap of the first four-element layer 2 is λ1 and that of the second four-element layer 7 λ2, thus allowing reception in a region of the long-wave lengths of 1.0∼1.7μ corresponding to a region not more than 1eV in 300°K.
COPYRIGHT: (C)1980,JPO&Japio
JP15830378A 1978-12-14 1978-12-14 Semiconductor photo-receptor Pending JPS5582473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15830378A JPS5582473A (en) 1978-12-14 1978-12-14 Semiconductor photo-receptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15830378A JPS5582473A (en) 1978-12-14 1978-12-14 Semiconductor photo-receptor

Publications (1)

Publication Number Publication Date
JPS5582473A true JPS5582473A (en) 1980-06-21

Family

ID=15668664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15830378A Pending JPS5582473A (en) 1978-12-14 1978-12-14 Semiconductor photo-receptor

Country Status (1)

Country Link
JP (1) JPS5582473A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5115294A (en) * 1989-06-29 1992-05-19 At&T Bell Laboratories Optoelectronic integrated circuit
JPH053338A (en) * 1991-06-25 1993-01-08 Hitachi Cable Ltd Photoreceptor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5115294A (en) * 1989-06-29 1992-05-19 At&T Bell Laboratories Optoelectronic integrated circuit
JPH053338A (en) * 1991-06-25 1993-01-08 Hitachi Cable Ltd Photoreceptor element

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