JPS57152182A - Manufacture of semiconductor laser device - Google Patents

Manufacture of semiconductor laser device

Info

Publication number
JPS57152182A
JPS57152182A JP3757181A JP3757181A JPS57152182A JP S57152182 A JPS57152182 A JP S57152182A JP 3757181 A JP3757181 A JP 3757181A JP 3757181 A JP3757181 A JP 3757181A JP S57152182 A JPS57152182 A JP S57152182A
Authority
JP
Japan
Prior art keywords
layer
current
type inp
type
stripe shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3757181A
Other languages
Japanese (ja)
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3757181A priority Critical patent/JPS57152182A/en
Publication of JPS57152182A publication Critical patent/JPS57152182A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To build a high precision current narrowing structure by a method wherein the flat upper clad surface of a PCW type semiconductor laser device is provided with a current stopping layer containing a stripe shaped window of a prescribed width and the current stopping layer is covered with an electrode forming layer. CONSTITUTION:A stripe shaped groove is formed on an N type InP substrate 9 and an N type InGaAsP light guiding layer 10, InGaAsP active layer 11, InGaAsP active layer 11 and P type InP clad layer 12 are piled one upon another in sequence. Next, an N type InP current stopping layer 13 is formed which then is provided with a stripe shaped window at its central part. In the next process, a P type InP electrode forming layer 14 is grown to cover the entire surface, which is followed by the formation of electrodes 15 and 16. A current narrowing structure of an optimum design is obtained and the conversion efficiency of electric current contributing to light emission is improved.
JP3757181A 1981-03-16 1981-03-16 Manufacture of semiconductor laser device Pending JPS57152182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3757181A JPS57152182A (en) 1981-03-16 1981-03-16 Manufacture of semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3757181A JPS57152182A (en) 1981-03-16 1981-03-16 Manufacture of semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS57152182A true JPS57152182A (en) 1982-09-20

Family

ID=12501211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3757181A Pending JPS57152182A (en) 1981-03-16 1981-03-16 Manufacture of semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57152182A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110336179A (en) * 2019-07-11 2019-10-15 中国科学院长春光学精密机械与物理研究所 A kind of semiconductor extension structure and preparation method thereof, semiconductor active photoelectric device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS5228281A (en) * 1975-08-28 1977-03-03 Fujitsu Ltd Light emitting semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS5228281A (en) * 1975-08-28 1977-03-03 Fujitsu Ltd Light emitting semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110336179A (en) * 2019-07-11 2019-10-15 中国科学院长春光学精密机械与物理研究所 A kind of semiconductor extension structure and preparation method thereof, semiconductor active photoelectric device

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