JPS5789288A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5789288A
JPS5789288A JP16612480A JP16612480A JPS5789288A JP S5789288 A JPS5789288 A JP S5789288A JP 16612480 A JP16612480 A JP 16612480A JP 16612480 A JP16612480 A JP 16612480A JP S5789288 A JPS5789288 A JP S5789288A
Authority
JP
Japan
Prior art keywords
type
layer
clad layer
type clad
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16612480A
Other languages
Japanese (ja)
Other versions
JPH0157515B2 (en
Inventor
Toshiro Hayakawa
Toshikimi Takagi
Naotaka Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16612480A priority Critical patent/JPS5789288A/en
Publication of JPS5789288A publication Critical patent/JPS5789288A/en
Priority to JP17745488A priority patent/JPS6453490A/en
Publication of JPH0157515B2 publication Critical patent/JPH0157515B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate stable operation for long hours and a long service life by providing a certain density of impurity forming a p type clad layer, an active layer, an n type clad layer doped with Te on a p type GaAs. CONSTITUTION:A V shaped groove 27 is formed in an n type current limiting layer 22 formed on a type GaAs substrate and a p type clad layer, an n type active layer 24, an n type clad layer 25 doped with Te and a cap layer 26 are consecutively formed. The thickness of the active layer 24 is maximum at the center of the V shaped groove 27 producing the distribution of refractive index in horizontal direction. The laser element with stable operation for a long service life is obtained.
JP16612480A 1980-11-25 1980-11-25 Semiconductor laser element Granted JPS5789288A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP16612480A JPS5789288A (en) 1980-11-25 1980-11-25 Semiconductor laser element
JP17745488A JPS6453490A (en) 1980-11-25 1988-07-15 Manufacture of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16612480A JPS5789288A (en) 1980-11-25 1980-11-25 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5789288A true JPS5789288A (en) 1982-06-03
JPH0157515B2 JPH0157515B2 (en) 1989-12-06

Family

ID=15825468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16612480A Granted JPS5789288A (en) 1980-11-25 1980-11-25 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5789288A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0085423A2 (en) * 1982-02-03 1983-08-10 Hitachi, Ltd. Semiconductor laser device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50144393A (en) * 1974-05-10 1975-11-20
JPS5290280A (en) * 1976-01-22 1977-07-29 Nec Corp Semiconductor laser element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50144393A (en) * 1974-05-10 1975-11-20
JPS5290280A (en) * 1976-01-22 1977-07-29 Nec Corp Semiconductor laser element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0085423A2 (en) * 1982-02-03 1983-08-10 Hitachi, Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
JPH0157515B2 (en) 1989-12-06

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