JPS57172789A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS57172789A
JPS57172789A JP5769481A JP5769481A JPS57172789A JP S57172789 A JPS57172789 A JP S57172789A JP 5769481 A JP5769481 A JP 5769481A JP 5769481 A JP5769481 A JP 5769481A JP S57172789 A JPS57172789 A JP S57172789A
Authority
JP
Japan
Prior art keywords
layer
type
groove
difference
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5769481A
Other languages
Japanese (ja)
Inventor
Saburo Yamamoto
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5769481A priority Critical patent/JPS57172789A/en
Publication of JPS57172789A publication Critical patent/JPS57172789A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a laser element having low light loss and low reactive current by a method wherein a crystal layer for laser operation forming a hetero junction and limiting an active region is grown on an N type GaAs layer providing a stripe shaped groove and having a carrier concentration of 3X 10<18>cm <-3> or more and a refractive index type waveguide mechanism is composed. CONSTITUTION:An N type GaAs layer 26 having carrier concentration of 3X 10<18>cm<-3> or more is piled on a P type GaAs substrate 25 and a V-shaped stripe groove 27 entering into the substrate 25 is perforated at the central section. Next, a P type GaAlAs clad layer 21, N type or P type GaAlAs active layer 22, N type GaAlAs clad layer 23, and N type GaAS cap layer 24 are stacked and grown on the whole surface including the groove 27. An Au-Ge-Ni alloy N side electrode and a P side electrode such as Au-Zn are formed on the layer 24 and the rear of the substrate 25 respectively and resonant end surfaces are formed b y cleavage. In this way, the difference in a real number section is formed larger than the difference in imaginary number section in the difference in effective double refractive index at the inside and outside of the groove 24 and current confinement to the groove 27 is made perfect.
JP5769481A 1981-04-16 1981-04-16 Semiconductor laser element Pending JPS57172789A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5769481A JPS57172789A (en) 1981-04-16 1981-04-16 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5769481A JPS57172789A (en) 1981-04-16 1981-04-16 Semiconductor laser element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP7260187A Division JPS6323385A (en) 1987-03-24 1987-03-24 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS57172789A true JPS57172789A (en) 1982-10-23

Family

ID=13063045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5769481A Pending JPS57172789A (en) 1981-04-16 1981-04-16 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57172789A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768200A (en) * 1985-06-18 1988-08-30 Mitsubishi Denki Kabushiki Kaisha Internal current confinement type semiconductor light emission device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768200A (en) * 1985-06-18 1988-08-30 Mitsubishi Denki Kabushiki Kaisha Internal current confinement type semiconductor light emission device

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