JPS5638884A - Stripe-type double hetero junction laser element - Google Patents

Stripe-type double hetero junction laser element

Info

Publication number
JPS5638884A
JPS5638884A JP11459879A JP11459879A JPS5638884A JP S5638884 A JPS5638884 A JP S5638884A JP 11459879 A JP11459879 A JP 11459879A JP 11459879 A JP11459879 A JP 11459879A JP S5638884 A JPS5638884 A JP S5638884A
Authority
JP
Japan
Prior art keywords
layer
stripe
type
diffused
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11459879A
Other languages
Japanese (ja)
Inventor
Shinsuke Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11459879A priority Critical patent/JPS5638884A/en
Publication of JPS5638884A publication Critical patent/JPS5638884A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Abstract

PURPOSE:To attain oscillation in a stable fundamental mode, by making the stripe width of a striped active region not larger than two times of the diffusion length of a carrier and by making the difference of the refractive index of the striped active region from that of an active layer not less than 5X10<-3>. CONSTITUTION:An N type Al0.3Ga0.7As layer 11, an N type GaAs active layer 12 and an N type Al0.3Ga0.7As layer 13 are sequentially grown on an N type GaAs substrate 10. Zn is diffused with a low concentration through a stripe of about 4mum in width into an SiO2 film 14 provided on the third layer 13. The diffusion front 16 of the Zn is in contact with the boundary of the layers 12, 11 or stays in the layer 11. At that time, a Zn-diffused region 12' in the layer 12 is changed into the P type. The film 14 is then removed. Zn is diffused at 18 into the stripe of about 20mum in an SiO2 film 17 provided on the layer 13. The diffusion front of the latter Zn is located in the layer 13.
JP11459879A 1979-09-06 1979-09-06 Stripe-type double hetero junction laser element Pending JPS5638884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11459879A JPS5638884A (en) 1979-09-06 1979-09-06 Stripe-type double hetero junction laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11459879A JPS5638884A (en) 1979-09-06 1979-09-06 Stripe-type double hetero junction laser element

Publications (1)

Publication Number Publication Date
JPS5638884A true JPS5638884A (en) 1981-04-14

Family

ID=14641861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11459879A Pending JPS5638884A (en) 1979-09-06 1979-09-06 Stripe-type double hetero junction laser element

Country Status (1)

Country Link
JP (1) JPS5638884A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01113294U (en) * 1988-01-25 1989-07-31
JPH01204489A (en) * 1988-02-10 1989-08-17 Toshiba Corp Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01113294U (en) * 1988-01-25 1989-07-31
JPH01204489A (en) * 1988-02-10 1989-08-17 Toshiba Corp Semiconductor laser

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