JPS5640293A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5640293A
JPS5640293A JP11647579A JP11647579A JPS5640293A JP S5640293 A JPS5640293 A JP S5640293A JP 11647579 A JP11647579 A JP 11647579A JP 11647579 A JP11647579 A JP 11647579A JP S5640293 A JPS5640293 A JP S5640293A
Authority
JP
Japan
Prior art keywords
type
substrate
layer
grown
varied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11647579A
Other languages
Japanese (ja)
Other versions
JPS625354B2 (en
Inventor
Yuichi Ide
Yoshinari Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11647579A priority Critical patent/JPS5640293A/en
Publication of JPS5640293A publication Critical patent/JPS5640293A/en
Publication of JPS625354B2 publication Critical patent/JPS625354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a semiconductor laser that oscillates in the fundamental transverse mode as well as to reduce the number of liquid growth needed, by using a substrate having a varied surface geometry, on which given layers are grown by the liquid phase epitaxy. CONSTITUTION:On the surface of an N type GaAs substrate 7 having a (100) surface, a photoresist film having a stripe-shaped window whose width is varied is provided. By using the film as a mask, the surface of the substrate 7 is etched to form a groove whose width is similarly varied. Then an N type Al0.3Ga0.7As layer 8 to shut in light and carriers is grown by the liquid phase epitaxy on the whole surface including the groove. On this, moreover, N type Al0.1Ga0.9As layers 9 and 9' for light guide and shutting in carriers are grown filling the groove to flatten the surface. After that, a P type GaAs active layer 10 and a P type Al0.3Ga0.7As light- shutting layer 11 are accumulated successively, which is coated with a P type GaAs contact simplificative layer 12, and a stripe-shaped P type electrode 14 is provided through an SiO2 film 13. The lower surface of the substrate 7 is coated with an N type electrode 15.
JP11647579A 1979-09-11 1979-09-11 Semiconductor laser Granted JPS5640293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11647579A JPS5640293A (en) 1979-09-11 1979-09-11 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11647579A JPS5640293A (en) 1979-09-11 1979-09-11 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5640293A true JPS5640293A (en) 1981-04-16
JPS625354B2 JPS625354B2 (en) 1987-02-04

Family

ID=14688015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11647579A Granted JPS5640293A (en) 1979-09-11 1979-09-11 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5640293A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987888A (en) * 1982-11-10 1984-05-21 Sharp Corp Semiconductor laser element
JPS61135184A (en) * 1984-12-05 1986-06-23 Sharp Corp Semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987888A (en) * 1982-11-10 1984-05-21 Sharp Corp Semiconductor laser element
JPH05875B2 (en) * 1982-11-10 1993-01-06 Sharp Kk
JPS61135184A (en) * 1984-12-05 1986-06-23 Sharp Corp Semiconductor laser device

Also Published As

Publication number Publication date
JPS625354B2 (en) 1987-02-04

Similar Documents

Publication Publication Date Title
JPS5710285A (en) Semiconductor laser
JPS5269285A (en) Semiconductor laser device
JPS5640293A (en) Semiconductor laser
JPS5743487A (en) Semiconductor laser
JPS568890A (en) Semiconductor laser and manufacture thereof
JPS568889A (en) Manufacture of semiconductor laser
JPS55156381A (en) Semiconductor laser
JPH03227090A (en) Semiconductor laser
JPS5688390A (en) Manufacture of semiconductor laser
JPS5630775A (en) Light emitting diode
JPS55153388A (en) Semiconductor laser device for oscillating multiple wavelength
JPS5638884A (en) Stripe-type double hetero junction laser element
JPS6482686A (en) Semiconductor laser
JPS56100488A (en) Semiconductor laser device
JPS6459983A (en) Manufacture of semiconductor laser
JPS57139982A (en) Semiconductor laser element
JPS6482590A (en) Manufacture of semiconductor device
JPS59231885A (en) Optical semiconductor device
KR100259006B1 (en) Manufacturing method of semiconductor laser device
JPS55123189A (en) Manufacture of semiconductor laser
JPS56110284A (en) Stripe-type double hetero junction semiconductor laser element
JPS54115087A (en) Double hetero junction laser of stripe type
JPS6442884A (en) Semiconductor laser element
JPS55132087A (en) Semiconductor laser device and its manufacturing
JPS55128894A (en) Semiconductor light emitting device and method of fabricating the same