JPS55156381A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS55156381A
JPS55156381A JP749379A JP749379A JPS55156381A JP S55156381 A JPS55156381 A JP S55156381A JP 749379 A JP749379 A JP 749379A JP 749379 A JP749379 A JP 749379A JP S55156381 A JPS55156381 A JP S55156381A
Authority
JP
Japan
Prior art keywords
semiconductor laser
region
current injection
dielectric film
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP749379A
Other languages
Japanese (ja)
Inventor
Toru Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP749379A priority Critical patent/JPS55156381A/en
Publication of JPS55156381A publication Critical patent/JPS55156381A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

Abstract

PURPOSE:To obtain a semiconductor laser of stabilized laterial mode and good production yield, by introducing a loss mechanism for controlling higher mode oscillation in such a manner as not to cause deterioration to life and reliability of the semiconductor laser and also to loss of basic mode. CONSTITUTION:After completion of orderly crystal growth of n-Al0.3Ga0.7As 7, n-AlxGa1-xAs (O<X<0.1), 8 which is an activated layer, and P-Al0.3Ga0.7AS 9 on an n-GaAs substrate 6 of a stripe type semiconductor laser of double hetero structure, plural P current injection regions 2 reaching the activated layer 8 and an absorption region 3 are dispersion-formed into the shapes as shown in sections 11 and 10 using such a dielectric film as SiO2 as a mask. By forming an ohmic electrode 11 after insulating surface of this absorption region 3 with a thin dielectric film, and by preventing carrier from flowing directly into the region 3 from the current injection region 2 due to difference in impurity between the current injection region 2 and the region 3, a semiconductor laser of high reliability is manufactured.
JP749379A 1979-01-24 1979-01-24 Semiconductor laser Pending JPS55156381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP749379A JPS55156381A (en) 1979-01-24 1979-01-24 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP749379A JPS55156381A (en) 1979-01-24 1979-01-24 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS55156381A true JPS55156381A (en) 1980-12-05

Family

ID=11667289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP749379A Pending JPS55156381A (en) 1979-01-24 1979-01-24 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS55156381A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58220488A (en) * 1982-06-17 1983-12-22 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS63222492A (en) * 1987-02-04 1988-09-16 エスディーエル・インコーポレーテッド Laser device
EP0468482A2 (en) * 1990-07-25 1992-01-29 Kabushiki Kaisha Toshiba Semiconductor laser
US5247536A (en) * 1990-07-25 1993-09-21 Kabushiki Kaisha Toshiba Semiconductor laser distributed feedback laser including mode interrupt means
WO1998033249A1 (en) * 1997-01-27 1998-07-30 International Business Machines Corporation Laser device
JP2003101155A (en) * 2001-09-21 2003-04-04 Sharp Corp Nitride semiconductor laser element
JP2022520738A (en) * 2019-01-31 2022-04-01 フェルディナント－ブラウン－インスティツット ゲーゲーエムベーハー， ライプニッツ－インスティツット フュー ヘーヒストフレクエンツテヒニク Laser irradiation generator

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58220488A (en) * 1982-06-17 1983-12-22 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS63222492A (en) * 1987-02-04 1988-09-16 エスディーエル・インコーポレーテッド Laser device
EP0468482A2 (en) * 1990-07-25 1992-01-29 Kabushiki Kaisha Toshiba Semiconductor laser
US5247536A (en) * 1990-07-25 1993-09-21 Kabushiki Kaisha Toshiba Semiconductor laser distributed feedback laser including mode interrupt means
WO1998033249A1 (en) * 1997-01-27 1998-07-30 International Business Machines Corporation Laser device
JP2003101155A (en) * 2001-09-21 2003-04-04 Sharp Corp Nitride semiconductor laser element
JP2022520738A (en) * 2019-01-31 2022-04-01 フェルディナント－ブラウン－インスティツット ゲーゲーエムベーハー， ライプニッツ－インスティツット フュー ヘーヒストフレクエンツテヒニク Laser irradiation generator

Similar Documents

Publication Publication Date Title
US4608581A (en) Semiconductor light emitter based on gallium nitride and process for manufacture thereof
US3986194A (en) Magnetic semiconductor device
JPS5681994A (en) Field effect type semiconductor laser and manufacture thereof
US5163064A (en) Laser diode array and manufacturing method thereof
JPS57170584A (en) Semiconductor laser device
JPS56104488A (en) Semiconductor laser element
JPS55156381A (en) Semiconductor laser
US4712219A (en) Visible double heterostructure-semiconductor laser
JPS57130490A (en) Semiconductor laser device
US4062035A (en) Luminescent diode
JPS5493380A (en) Semiconductor light emitting device
JPS54107284A (en) Semiconductor junction laser and its production
JPS5727092A (en) Semiconductor laser device
JPS54152879A (en) Structure of semiconductor laser element and its manufacture
JPS6482590A (en) Manufacture of semiconductor device
JPS5474686A (en) Visible semiconductor laser and its manufacture
JPS54138386A (en) Semiconductor laser device of current narrow type
SU1358017A1 (en) Double heterostructure for radiating devices
CA1059599A (en) Luminescent diode
JPS5654084A (en) Compound semiconductor laser apparatus
JPS5596694A (en) Semiconductor laser device and method of fabricating the same
JPS5518078A (en) Semiconductor light emission device
JPS5624995A (en) Manufacture of semiconductor laser
JPS551164A (en) Method of fabricating semiconductor laser device
JPS6428871A (en) Superconducting transistor