JPS5596694A - Semiconductor laser device and method of fabricating the same - Google Patents

Semiconductor laser device and method of fabricating the same

Info

Publication number
JPS5596694A
JPS5596694A JP453179A JP453179A JPS5596694A JP S5596694 A JPS5596694 A JP S5596694A JP 453179 A JP453179 A JP 453179A JP 453179 A JP453179 A JP 453179A JP S5596694 A JPS5596694 A JP S5596694A
Authority
JP
Japan
Prior art keywords
layer
substrate
type
ohmic electrode
difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP453179A
Other languages
Japanese (ja)
Inventor
Takashi Sugino
Kunio Ito
Masaru Wada
Yuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP453179A priority Critical patent/JPS5596694A/en
Publication of JPS5596694A publication Critical patent/JPS5596694A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure

Abstract

PURPOSE:To stably provide a basic lateral mode oscillation by a semiconductor laser device by locking in light at an active layer in a direction perpendicular to a current injection direction with another mechanism than a buried layer and employing a buried layer having high specific resistance for limiting the current. CONSTITUTION:A stepwise difference is formed on an n-type substrate 8. Then, an n-type clad layer 9, an active layer 10, a p-type clad 11, and a p-type ohmic electrode forming layer 12 are sequentially grown on the substrate 8. An oxide film 13 is adhered onto the surface of the crystal thus obtained in such a manner that the bent portion of the layer 10 is placed directly above the difference in stripe state. With the oxide film 13 as a mask the substrate is mesa etched. Then, a buried layer 14 is grown on the substrate. After a zinc is diffused in the layer 12, a p-type side ohmic electrode 15 is formed thereon. Then, an n-type side ohmic electrode 16 is formed thereon. In this case, the light is locked in due to the difference of the thickness occurred at the bent portion of the layer 10. Thus, high specific resistance is provided at the layer 14 for limiting the current.
JP453179A 1979-01-18 1979-01-18 Semiconductor laser device and method of fabricating the same Pending JPS5596694A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP453179A JPS5596694A (en) 1979-01-18 1979-01-18 Semiconductor laser device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP453179A JPS5596694A (en) 1979-01-18 1979-01-18 Semiconductor laser device and method of fabricating the same

Publications (1)

Publication Number Publication Date
JPS5596694A true JPS5596694A (en) 1980-07-23

Family

ID=11586618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP453179A Pending JPS5596694A (en) 1979-01-18 1979-01-18 Semiconductor laser device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS5596694A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4365336A (en) * 1979-11-19 1982-12-21 Matsushita Electric Industrial Co., Ltd. Terraced substrate semiconductor laser
JPS5887893A (en) * 1981-11-20 1983-05-25 Hitachi Ltd Semiconductor laser element
JPS61236189A (en) * 1985-04-11 1986-10-21 Sharp Corp Semiconductor laser element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4365336A (en) * 1979-11-19 1982-12-21 Matsushita Electric Industrial Co., Ltd. Terraced substrate semiconductor laser
JPS5887893A (en) * 1981-11-20 1983-05-25 Hitachi Ltd Semiconductor laser element
JPS61236189A (en) * 1985-04-11 1986-10-21 Sharp Corp Semiconductor laser element

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