JPS5676588A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5676588A
JPS5676588A JP15479379A JP15479379A JPS5676588A JP S5676588 A JPS5676588 A JP S5676588A JP 15479379 A JP15479379 A JP 15479379A JP 15479379 A JP15479379 A JP 15479379A JP S5676588 A JPS5676588 A JP S5676588A
Authority
JP
Japan
Prior art keywords
layer
type
type inp
semiconductor laser
ingaasp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15479379A
Other languages
Japanese (ja)
Other versions
JPS5925399B2 (en
Inventor
Toshio Murotani
Jun Ishii
Etsuji Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15479379A priority Critical patent/JPS5925399B2/en
Publication of JPS5676588A publication Critical patent/JPS5676588A/en
Publication of JPS5925399B2 publication Critical patent/JPS5925399B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Weting (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a semiconductor laser having long lifetime with low oscillation threshold value by forming a multilayer of semiconductor layer by epitaxial growth in a groove formed on a substrate and forming an active region by a selective melt- back process. CONSTITUTION:A groove 15 is formed on the main surface of an N type InP substrate 1, a resist 16 is removed, and N type InP layer 7, N type InGaAsP layer 2, P type InP layer 3 are epitaxially grown. then, it is melt back in In solution containing unsaturated P. The layers 3, and then 2 are dissolved, and while the InGaAsP is dissolving, the Ga density of the In solution is increased, and N type InP is difficult to be dissolved, and the melt back can be stopped at the position designated by a broken line 10. Thereafter, the P type InP layer 8, the P type InGaAsP layer 9 are grown, an insulating film 11, and electrodes 20, 21 are formed, and there can be formed a buried hetero junction type semiconductor laser.
JP15479379A 1979-11-28 1979-11-28 Manufacturing method of semiconductor laser Expired JPS5925399B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15479379A JPS5925399B2 (en) 1979-11-28 1979-11-28 Manufacturing method of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15479379A JPS5925399B2 (en) 1979-11-28 1979-11-28 Manufacturing method of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5676588A true JPS5676588A (en) 1981-06-24
JPS5925399B2 JPS5925399B2 (en) 1984-06-16

Family

ID=15592009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15479379A Expired JPS5925399B2 (en) 1979-11-28 1979-11-28 Manufacturing method of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5925399B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116187A (en) * 1983-11-28 1985-06-22 Sanyo Electric Co Ltd Manufacture of semiconductor laser
US5114877A (en) * 1991-01-08 1992-05-19 Xerox Corporation Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth
US5138625A (en) * 1991-01-08 1992-08-11 Xerox Corporation Quantum wire semiconductor laser
KR100359739B1 (en) * 2000-12-28 2002-11-09 한국과학기술연구원 Method of fusion for heteroepitaxial layers and overgrowth thereon

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116187A (en) * 1983-11-28 1985-06-22 Sanyo Electric Co Ltd Manufacture of semiconductor laser
US5114877A (en) * 1991-01-08 1992-05-19 Xerox Corporation Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth
US5138625A (en) * 1991-01-08 1992-08-11 Xerox Corporation Quantum wire semiconductor laser
KR100359739B1 (en) * 2000-12-28 2002-11-09 한국과학기술연구원 Method of fusion for heteroepitaxial layers and overgrowth thereon

Also Published As

Publication number Publication date
JPS5925399B2 (en) 1984-06-16

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