JPS6457787A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6457787A
JPS6457787A JP21569087A JP21569087A JPS6457787A JP S6457787 A JPS6457787 A JP S6457787A JP 21569087 A JP21569087 A JP 21569087A JP 21569087 A JP21569087 A JP 21569087A JP S6457787 A JPS6457787 A JP S6457787A
Authority
JP
Japan
Prior art keywords
layer
layers
type
buried
stripelike
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21569087A
Other languages
Japanese (ja)
Inventor
Akio Yoshikawa
Takashi Sugino
Masahiro Kume
Masanori Hirose
Atsuya Yamamoto
Akira Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21569087A priority Critical patent/JPS6457787A/en
Publication of JPS6457787A publication Critical patent/JPS6457787A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enclose implanted carrier and laser light in an active region, to operate with a low threshold current and low current, and to perform a basic lateral mode oscillation by composing a multilayer thin film in a stripelike state, and forming its both sides of buried layers of ZnSe1-zSz or ZnTe1-zSz. CONSTITUTION:An N-type AlxGa1-xAs clad layer 2, an AlyGa1-yAs active layer 3, a P-type AlxGa1-xAs clad layer 4, and a P-type GaAs contact layer 5 are continuously sequentially formed on one main surface of an N-type GaAs substrate 1. After the layers 2-5 remain in stripelike state, an N-type ZnSezS1-z layer 6 is selectively buried and grown by an MOCVD method. The forbidden band width of the layer 6 is sufficiently larger than those of the layers 2, 4, and the leakage of the implanted carrier to the buried layers is stopped by the effect of its hetero barrier.
JP21569087A 1987-08-28 1987-08-28 Semiconductor laser device Pending JPS6457787A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21569087A JPS6457787A (en) 1987-08-28 1987-08-28 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21569087A JPS6457787A (en) 1987-08-28 1987-08-28 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6457787A true JPS6457787A (en) 1989-03-06

Family

ID=16676544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21569087A Pending JPS6457787A (en) 1987-08-28 1987-08-28 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6457787A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457780A (en) * 1987-08-28 1989-03-06 Seiko Epson Corp Semiconductor laser
JPH02205381A (en) * 1989-02-03 1990-08-15 Matsushita Electric Ind Co Ltd Semiconductor light emitting element
US5403990A (en) * 1991-11-21 1995-04-04 Japan Tobacco Inc. Apparatus boring perforations in a web sheet
JPH0992926A (en) * 1995-09-23 1997-04-04 Nec Corp Semiconductor laser and its manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457780A (en) * 1987-08-28 1989-03-06 Seiko Epson Corp Semiconductor laser
JPH02205381A (en) * 1989-02-03 1990-08-15 Matsushita Electric Ind Co Ltd Semiconductor light emitting element
US5403990A (en) * 1991-11-21 1995-04-04 Japan Tobacco Inc. Apparatus boring perforations in a web sheet
JPH0992926A (en) * 1995-09-23 1997-04-04 Nec Corp Semiconductor laser and its manufacture

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