JPS6457787A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS6457787A JPS6457787A JP21569087A JP21569087A JPS6457787A JP S6457787 A JPS6457787 A JP S6457787A JP 21569087 A JP21569087 A JP 21569087A JP 21569087 A JP21569087 A JP 21569087A JP S6457787 A JPS6457787 A JP S6457787A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- type
- buried
- stripelike
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To enclose implanted carrier and laser light in an active region, to operate with a low threshold current and low current, and to perform a basic lateral mode oscillation by composing a multilayer thin film in a stripelike state, and forming its both sides of buried layers of ZnSe1-zSz or ZnTe1-zSz. CONSTITUTION:An N-type AlxGa1-xAs clad layer 2, an AlyGa1-yAs active layer 3, a P-type AlxGa1-xAs clad layer 4, and a P-type GaAs contact layer 5 are continuously sequentially formed on one main surface of an N-type GaAs substrate 1. After the layers 2-5 remain in stripelike state, an N-type ZnSezS1-z layer 6 is selectively buried and grown by an MOCVD method. The forbidden band width of the layer 6 is sufficiently larger than those of the layers 2, 4, and the leakage of the implanted carrier to the buried layers is stopped by the effect of its hetero barrier.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21569087A JPS6457787A (en) | 1987-08-28 | 1987-08-28 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21569087A JPS6457787A (en) | 1987-08-28 | 1987-08-28 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6457787A true JPS6457787A (en) | 1989-03-06 |
Family
ID=16676544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21569087A Pending JPS6457787A (en) | 1987-08-28 | 1987-08-28 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6457787A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6457780A (en) * | 1987-08-28 | 1989-03-06 | Seiko Epson Corp | Semiconductor laser |
JPH02205381A (en) * | 1989-02-03 | 1990-08-15 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element |
US5403990A (en) * | 1991-11-21 | 1995-04-04 | Japan Tobacco Inc. | Apparatus boring perforations in a web sheet |
JPH0992926A (en) * | 1995-09-23 | 1997-04-04 | Nec Corp | Semiconductor laser and its manufacture |
-
1987
- 1987-08-28 JP JP21569087A patent/JPS6457787A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6457780A (en) * | 1987-08-28 | 1989-03-06 | Seiko Epson Corp | Semiconductor laser |
JPH02205381A (en) * | 1989-02-03 | 1990-08-15 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element |
US5403990A (en) * | 1991-11-21 | 1995-04-04 | Japan Tobacco Inc. | Apparatus boring perforations in a web sheet |
JPH0992926A (en) * | 1995-09-23 | 1997-04-04 | Nec Corp | Semiconductor laser and its manufacture |
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