JPS5749290A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5749290A
JPS5749290A JP12570880A JP12570880A JPS5749290A JP S5749290 A JPS5749290 A JP S5749290A JP 12570880 A JP12570880 A JP 12570880A JP 12570880 A JP12570880 A JP 12570880A JP S5749290 A JPS5749290 A JP S5749290A
Authority
JP
Japan
Prior art keywords
layer
type
region
diffusion
entire area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12570880A
Other languages
Japanese (ja)
Inventor
Toshio Tanaka
Toshio Sogo
Saburo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12570880A priority Critical patent/JPS5749290A/en
Publication of JPS5749290A publication Critical patent/JPS5749290A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make it possible to obtain a semiconductor laser device without using diffusion mask which would undesirably impart a stress to the epitaxial growth layer, by providing a method wherein the epitaxial layer is formed in a stepped manner and the diffusion layer is formed to a constant depth over the entire area. CONSTITUTION:A P type region or a region 13 of high resistance is formed on a part of the N type GaAS substrate 1 to produce a step. An N type AlGaAs layer 2a, N type GaAs active layer 3a, N type AlGaAs layer 4a and P type AlGaAs layer 5a are formed along the step by epitaxial growth method. Then, an N type GaAs layer 6a is superposed to eliminate the step. Then, Zn is diffused over the entire area from the surface to a contstant depth to form a P<+> type region 7 and an underlying P type region 8. A web-like P type layer 8 extends across the active layer 3a, N type layer 4a and the P type layer 5a at the stepped part. Then, electrodes 10 and 11 are formed on both surfaces and the structure is split along the chain lines. This method does not necessitate the use of any diffusion mask for selective diffusion, so that the deterioration of characteristics is avoided and a longer life is ensured. In addition, the level of threshold current is maintained low thanks to a reverse bias junction.
JP12570880A 1980-09-08 1980-09-08 Semiconductor laser device Pending JPS5749290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12570880A JPS5749290A (en) 1980-09-08 1980-09-08 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12570880A JPS5749290A (en) 1980-09-08 1980-09-08 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5749290A true JPS5749290A (en) 1982-03-23

Family

ID=14916762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12570880A Pending JPS5749290A (en) 1980-09-08 1980-09-08 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5749290A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222586A (en) * 1982-06-18 1983-12-24 Omron Tateisi Electronics Co Semiconductor laser
JPS5913388A (en) * 1982-07-14 1984-01-24 Omron Tateisi Electronics Co Semiconductor laser array
JPS5913387A (en) * 1982-07-14 1984-01-24 Omron Tateisi Electronics Co Semiconductor laser
JPS5914691A (en) * 1982-07-16 1984-01-25 Omron Tateisi Electronics Co Semiconductor laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410689A (en) * 1977-06-24 1979-01-26 Mitsubishi Electric Corp Semiconductor laser device and its production
JPS54150990A (en) * 1978-05-18 1979-11-27 Mitsubishi Electric Corp Semiconductor laser device and its manufacture
JPS55115388A (en) * 1979-02-26 1980-09-05 Mitsubishi Electric Corp Manufacture of semiconductor laser device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410689A (en) * 1977-06-24 1979-01-26 Mitsubishi Electric Corp Semiconductor laser device and its production
JPS54150990A (en) * 1978-05-18 1979-11-27 Mitsubishi Electric Corp Semiconductor laser device and its manufacture
JPS55115388A (en) * 1979-02-26 1980-09-05 Mitsubishi Electric Corp Manufacture of semiconductor laser device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222586A (en) * 1982-06-18 1983-12-24 Omron Tateisi Electronics Co Semiconductor laser
JPS5913388A (en) * 1982-07-14 1984-01-24 Omron Tateisi Electronics Co Semiconductor laser array
JPS5913387A (en) * 1982-07-14 1984-01-24 Omron Tateisi Electronics Co Semiconductor laser
JPS5914691A (en) * 1982-07-16 1984-01-25 Omron Tateisi Electronics Co Semiconductor laser

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