JPS6453489A - Planar electrode type semiconductor element - Google Patents

Planar electrode type semiconductor element

Info

Publication number
JPS6453489A
JPS6453489A JP1720088A JP1720088A JPS6453489A JP S6453489 A JPS6453489 A JP S6453489A JP 1720088 A JP1720088 A JP 1720088A JP 1720088 A JP1720088 A JP 1720088A JP S6453489 A JPS6453489 A JP S6453489A
Authority
JP
Japan
Prior art keywords
ridge
type electrode
groove
layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1720088A
Other languages
Japanese (ja)
Inventor
Masanobu Okayasu
Jiro Tenmyo
Atsuo Kousaki
Yuji Hasumi
Shingo Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1720088A priority Critical patent/JPS6453489A/en
Publication of JPS6453489A publication Critical patent/JPS6453489A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To avoid disconnection of wiring caused by surface stage difference and to enable high level of integration of element by selectively performing epitaxial growth within the groove provided in a semi-insulation substrate, completely burying a multilayer film including a wiring layer within the groove for forming a planar shape. CONSTITUTION:Epitaxial growth of a wiring layer 102, clad layer 103, active layer 104, clad layer 105, and cap layer 106 is selectively achieved within groove by the pressure-reducing MO-VPE method after forming the groove on a semi- insulation GaAs substrate 101. Then, the SiO2 film is accumulated again, a stripe pattern is formed by photolithography, and then a ridge is formed by etching. Then, after the ridge part and a part for mounting n-type electrode 109 is protected, etching is performed so that active layer is cut off. Then, after forming an insulation film 401 such as SiO2 at the part excluding the upper part of ridge and n-type electrode mounting part, a p-type electrode 108 and n-type electrode 109 are formed at a specified location to achieve ridge- types semiconductor laser.
JP1720088A 1987-02-13 1988-01-29 Planar electrode type semiconductor element Pending JPS6453489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1720088A JPS6453489A (en) 1987-02-13 1988-01-29 Planar electrode type semiconductor element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2953987 1987-02-13
JP1720088A JPS6453489A (en) 1987-02-13 1988-01-29 Planar electrode type semiconductor element

Publications (1)

Publication Number Publication Date
JPS6453489A true JPS6453489A (en) 1989-03-01

Family

ID=26353683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1720088A Pending JPS6453489A (en) 1987-02-13 1988-01-29 Planar electrode type semiconductor element

Country Status (1)

Country Link
JP (1) JPS6453489A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057408A (en) * 2000-08-09 2002-02-22 Sony Corp Semiconductor laser and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057408A (en) * 2000-08-09 2002-02-22 Sony Corp Semiconductor laser and its manufacturing method

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