JPS6453489A - Planar electrode type semiconductor element - Google Patents
Planar electrode type semiconductor elementInfo
- Publication number
- JPS6453489A JPS6453489A JP1720088A JP1720088A JPS6453489A JP S6453489 A JPS6453489 A JP S6453489A JP 1720088 A JP1720088 A JP 1720088A JP 1720088 A JP1720088 A JP 1720088A JP S6453489 A JPS6453489 A JP S6453489A
- Authority
- JP
- Japan
- Prior art keywords
- ridge
- type electrode
- groove
- layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Lasers (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To avoid disconnection of wiring caused by surface stage difference and to enable high level of integration of element by selectively performing epitaxial growth within the groove provided in a semi-insulation substrate, completely burying a multilayer film including a wiring layer within the groove for forming a planar shape. CONSTITUTION:Epitaxial growth of a wiring layer 102, clad layer 103, active layer 104, clad layer 105, and cap layer 106 is selectively achieved within groove by the pressure-reducing MO-VPE method after forming the groove on a semi- insulation GaAs substrate 101. Then, the SiO2 film is accumulated again, a stripe pattern is formed by photolithography, and then a ridge is formed by etching. Then, after the ridge part and a part for mounting n-type electrode 109 is protected, etching is performed so that active layer is cut off. Then, after forming an insulation film 401 such as SiO2 at the part excluding the upper part of ridge and n-type electrode mounting part, a p-type electrode 108 and n-type electrode 109 are formed at a specified location to achieve ridge- types semiconductor laser.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1720088A JPS6453489A (en) | 1987-02-13 | 1988-01-29 | Planar electrode type semiconductor element |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2953987 | 1987-02-13 | ||
JP1720088A JPS6453489A (en) | 1987-02-13 | 1988-01-29 | Planar electrode type semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6453489A true JPS6453489A (en) | 1989-03-01 |
Family
ID=26353683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1720088A Pending JPS6453489A (en) | 1987-02-13 | 1988-01-29 | Planar electrode type semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6453489A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002057408A (en) * | 2000-08-09 | 2002-02-22 | Sony Corp | Semiconductor laser and its manufacturing method |
-
1988
- 1988-01-29 JP JP1720088A patent/JPS6453489A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002057408A (en) * | 2000-08-09 | 2002-02-22 | Sony Corp | Semiconductor laser and its manufacturing method |
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