JPS57186384A - Multipled wavelength type buried hetero-structure semiconductor laser array - Google Patents

Multipled wavelength type buried hetero-structure semiconductor laser array

Info

Publication number
JPS57186384A
JPS57186384A JP7166181A JP7166181A JPS57186384A JP S57186384 A JPS57186384 A JP S57186384A JP 7166181 A JP7166181 A JP 7166181A JP 7166181 A JP7166181 A JP 7166181A JP S57186384 A JPS57186384 A JP S57186384A
Authority
JP
Japan
Prior art keywords
layer
type
current block
laser array
grown successively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7166181A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7166181A priority Critical patent/JPS57186384A/en
Publication of JPS57186384A publication Critical patent/JPS57186384A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the laser arrays, oscillating wavelengths therefrom largely differ, easily by mutually making the energy gaps of the active layers of adjacent lasers differ and using a section between the adjacent lasers as a current block layer. CONSTITUTION:An N type buffer layer 502, the active layer 503 having the composition of 1.3mum wavelengths and a P type clad layer 504 are grown successively onto an N type substrate 501. The surface is etched up to a section deeper than the layer 503 by using an SiO2 film 505 as an etching mask, and an N type buffer layer 506, the active layer 507 having the compositon of 1.5mum wavelength and a P type clad layer 508 are grown successively through epitaxial growth as the film 505 is left as it is. Mesas 509, 510, are shaped so as to leave the approximately central sections of the layers 503, 507. The P type current block layer 511, the N type current block layer 512, a P type clad layer 513 and an N type gap layer 514 are grown successively to a wafer etched in mesa form, and a P sid electrode 517 and an N side electrode 518 are shaped. Accordingly, the laser array having high performance is obtained because strain, etc. on the interface of growth are removed through mesa etching.
JP7166181A 1981-05-12 1981-05-12 Multipled wavelength type buried hetero-structure semiconductor laser array Pending JPS57186384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7166181A JPS57186384A (en) 1981-05-12 1981-05-12 Multipled wavelength type buried hetero-structure semiconductor laser array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7166181A JPS57186384A (en) 1981-05-12 1981-05-12 Multipled wavelength type buried hetero-structure semiconductor laser array

Publications (1)

Publication Number Publication Date
JPS57186384A true JPS57186384A (en) 1982-11-16

Family

ID=13467006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7166181A Pending JPS57186384A (en) 1981-05-12 1981-05-12 Multipled wavelength type buried hetero-structure semiconductor laser array

Country Status (1)

Country Link
JP (1) JPS57186384A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222190A (en) * 1985-03-28 1986-10-02 Nec Corp Two-element quantum well structure semiconductor laser and manufacture thereof
KR100540891B1 (en) * 1999-12-27 2006-01-12 한국전자통신연구원 Multi-wavelength Detectable Photodiode Array and Fabricating Method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222190A (en) * 1985-03-28 1986-10-02 Nec Corp Two-element quantum well structure semiconductor laser and manufacture thereof
KR100540891B1 (en) * 1999-12-27 2006-01-12 한국전자통신연구원 Multi-wavelength Detectable Photodiode Array and Fabricating Method thereof

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