JPS5574192A - Manufacturing semiconductor laser - Google Patents

Manufacturing semiconductor laser

Info

Publication number
JPS5574192A
JPS5574192A JP14685478A JP14685478A JPS5574192A JP S5574192 A JPS5574192 A JP S5574192A JP 14685478 A JP14685478 A JP 14685478A JP 14685478 A JP14685478 A JP 14685478A JP S5574192 A JPS5574192 A JP S5574192A
Authority
JP
Japan
Prior art keywords
layer
type
growing
grooves
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14685478A
Other languages
Japanese (ja)
Other versions
JPS6115599B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14685478A priority Critical patent/JPS5574192A/en
Publication of JPS5574192A publication Critical patent/JPS5574192A/en
Publication of JPS6115599B2 publication Critical patent/JPS6115599B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To improve yield rates and to enhance reproducibility in production by growing anothr layer on a layer which is to become active region, providing parallel small grooves on both sides of the active layer, and forming a growing layer in the groove portions again.
CONSTITUTION: On a substrate 11 comprising n-type GaAs, an n-type Al0.3Ga0.7 As layer 12, an n-type Al0.1Ga0.9As layer 13, a p-type GaAs active layer 14, a p- type Al0.3Ga0.7As layer 15 are epitaxially grown. On the upper-side surface of the layer 15, a mask is provided so that grooves whose width is 20μm are selectively etched on both sides of a long and narrow area of 5μm, and the layer 15 is etched unitl the layer 12 is reached. After the photoresist has been removed, an n-type Al0.3Ga0.7As layer 16 is grown in the grooves. In the process of forming the stripe- shaped groove whose width is 100μm and less, the conditions can readily established, the control is excellent, and the same characteristics can be found in the crystal growing. Therefore, the yield rates are high and the reproducibility is good.
COPYRIGHT: (C)1980,JPO&Japio
JP14685478A 1978-11-28 1978-11-28 Manufacturing semiconductor laser Granted JPS5574192A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14685478A JPS5574192A (en) 1978-11-28 1978-11-28 Manufacturing semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14685478A JPS5574192A (en) 1978-11-28 1978-11-28 Manufacturing semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5574192A true JPS5574192A (en) 1980-06-04
JPS6115599B2 JPS6115599B2 (en) 1986-04-24

Family

ID=15417045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14685478A Granted JPS5574192A (en) 1978-11-28 1978-11-28 Manufacturing semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5574192A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885584A (en) * 1981-11-16 1983-05-21 Nec Corp Semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885584A (en) * 1981-11-16 1983-05-21 Nec Corp Semiconductor laser

Also Published As

Publication number Publication date
JPS6115599B2 (en) 1986-04-24

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