JPS5574192A - Manufacturing semiconductor laser - Google Patents
Manufacturing semiconductor laserInfo
- Publication number
- JPS5574192A JPS5574192A JP14685478A JP14685478A JPS5574192A JP S5574192 A JPS5574192 A JP S5574192A JP 14685478 A JP14685478 A JP 14685478A JP 14685478 A JP14685478 A JP 14685478A JP S5574192 A JPS5574192 A JP S5574192A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- growing
- grooves
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To improve yield rates and to enhance reproducibility in production by growing anothr layer on a layer which is to become active region, providing parallel small grooves on both sides of the active layer, and forming a growing layer in the groove portions again.
CONSTITUTION: On a substrate 11 comprising n-type GaAs, an n-type Al0.3Ga0.7 As layer 12, an n-type Al0.1Ga0.9As layer 13, a p-type GaAs active layer 14, a p- type Al0.3Ga0.7As layer 15 are epitaxially grown. On the upper-side surface of the layer 15, a mask is provided so that grooves whose width is 20μm are selectively etched on both sides of a long and narrow area of 5μm, and the layer 15 is etched unitl the layer 12 is reached. After the photoresist has been removed, an n-type Al0.3Ga0.7As layer 16 is grown in the grooves. In the process of forming the stripe- shaped groove whose width is 100μm and less, the conditions can readily established, the control is excellent, and the same characteristics can be found in the crystal growing. Therefore, the yield rates are high and the reproducibility is good.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14685478A JPS5574192A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14685478A JPS5574192A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5574192A true JPS5574192A (en) | 1980-06-04 |
JPS6115599B2 JPS6115599B2 (en) | 1986-04-24 |
Family
ID=15417045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14685478A Granted JPS5574192A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5574192A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5885584A (en) * | 1981-11-16 | 1983-05-21 | Nec Corp | Semiconductor laser |
-
1978
- 1978-11-28 JP JP14685478A patent/JPS5574192A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5885584A (en) * | 1981-11-16 | 1983-05-21 | Nec Corp | Semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
JPS6115599B2 (en) | 1986-04-24 |
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