Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP9400976ApriorityCriticalpatent/JPS5319777A/en
Publication of JPS5319777ApublicationCriticalpatent/JPS5319777A/en
PURPOSE: To facilitate diffusion process and increase the yield of element production by using a GaAs substrate of high resistivity as a substrate for the crystal growth of semiconductor lasers and providing negative electrodes on the grown layer of an n type.