JPS57106090A - Manufacture of photo semiconductor - Google Patents

Manufacture of photo semiconductor

Info

Publication number
JPS57106090A
JPS57106090A JP18123080A JP18123080A JPS57106090A JP S57106090 A JPS57106090 A JP S57106090A JP 18123080 A JP18123080 A JP 18123080A JP 18123080 A JP18123080 A JP 18123080A JP S57106090 A JPS57106090 A JP S57106090A
Authority
JP
Japan
Prior art keywords
crystal
ingaas
temperature
active layer
cover layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18123080A
Other languages
Japanese (ja)
Inventor
Jiro Okazaki
Kenzo Akita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18123080A priority Critical patent/JPS57106090A/en
Publication of JPS57106090A publication Critical patent/JPS57106090A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To prevent deteriorating of a luminous efficiency, by a method wherein an active layer, consisting of a InGaAsP crystal, is grown at a temperature higher than a given value, a cover layer consisting of a crystal of a given component is grown on the active layer at a temperature below the given value, and a melt-back takes place after temperature falls. CONSTITUTION:An active layer, consisting of a InGaAs crystal and having a wave length of 1.5mum or more, is grown on a InP substrate at 630 deg.C or more. A cover layer consists of a InGaAs being longer than a wave length of 1.63mum is then formed, and temperature is caused to fall rapidly. A cover layer, consisting of a InGaAs ternary crystal or a InGaAs quaternary crystal having an organization similar to the ternarycrystal, is formed on the active layer. After temperature is decreased by 20 deg.C or more in a condition that the cover layer is left as it is, a melt back takes place to obtain a double hetrostructure.
JP18123080A 1980-12-23 1980-12-23 Manufacture of photo semiconductor Pending JPS57106090A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18123080A JPS57106090A (en) 1980-12-23 1980-12-23 Manufacture of photo semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18123080A JPS57106090A (en) 1980-12-23 1980-12-23 Manufacture of photo semiconductor

Publications (1)

Publication Number Publication Date
JPS57106090A true JPS57106090A (en) 1982-07-01

Family

ID=16097075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18123080A Pending JPS57106090A (en) 1980-12-23 1980-12-23 Manufacture of photo semiconductor

Country Status (1)

Country Link
JP (1) JPS57106090A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0289012A2 (en) * 1987-04-30 1988-11-02 Siemens Aktiengesellschaft Manufacturing method for laser diode with buried active layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0289012A2 (en) * 1987-04-30 1988-11-02 Siemens Aktiengesellschaft Manufacturing method for laser diode with buried active layer
EP0289012A3 (en) * 1987-04-30 1990-05-09 Siemens Aktiengesellschaft Manufacturing method for laser diode with buried active layer

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