JPS57106090A - Manufacture of photo semiconductor - Google Patents
Manufacture of photo semiconductorInfo
- Publication number
- JPS57106090A JPS57106090A JP18123080A JP18123080A JPS57106090A JP S57106090 A JPS57106090 A JP S57106090A JP 18123080 A JP18123080 A JP 18123080A JP 18123080 A JP18123080 A JP 18123080A JP S57106090 A JPS57106090 A JP S57106090A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- ingaas
- temperature
- active layer
- cover layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To prevent deteriorating of a luminous efficiency, by a method wherein an active layer, consisting of a InGaAsP crystal, is grown at a temperature higher than a given value, a cover layer consisting of a crystal of a given component is grown on the active layer at a temperature below the given value, and a melt-back takes place after temperature falls. CONSTITUTION:An active layer, consisting of a InGaAs crystal and having a wave length of 1.5mum or more, is grown on a InP substrate at 630 deg.C or more. A cover layer consists of a InGaAs being longer than a wave length of 1.63mum is then formed, and temperature is caused to fall rapidly. A cover layer, consisting of a InGaAs ternary crystal or a InGaAs quaternary crystal having an organization similar to the ternarycrystal, is formed on the active layer. After temperature is decreased by 20 deg.C or more in a condition that the cover layer is left as it is, a melt back takes place to obtain a double hetrostructure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18123080A JPS57106090A (en) | 1980-12-23 | 1980-12-23 | Manufacture of photo semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18123080A JPS57106090A (en) | 1980-12-23 | 1980-12-23 | Manufacture of photo semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57106090A true JPS57106090A (en) | 1982-07-01 |
Family
ID=16097075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18123080A Pending JPS57106090A (en) | 1980-12-23 | 1980-12-23 | Manufacture of photo semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57106090A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0289012A2 (en) * | 1987-04-30 | 1988-11-02 | Siemens Aktiengesellschaft | Manufacturing method for laser diode with buried active layer |
-
1980
- 1980-12-23 JP JP18123080A patent/JPS57106090A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0289012A2 (en) * | 1987-04-30 | 1988-11-02 | Siemens Aktiengesellschaft | Manufacturing method for laser diode with buried active layer |
EP0289012A3 (en) * | 1987-04-30 | 1990-05-09 | Siemens Aktiengesellschaft | Manufacturing method for laser diode with buried active layer |
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