JPS5683982A - Semiconductor light emission element - Google Patents
Semiconductor light emission elementInfo
- Publication number
- JPS5683982A JPS5683982A JP16133379A JP16133379A JPS5683982A JP S5683982 A JPS5683982 A JP S5683982A JP 16133379 A JP16133379 A JP 16133379A JP 16133379 A JP16133379 A JP 16133379A JP S5683982 A JPS5683982 A JP S5683982A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- diffusion
- type inp
- carrier lock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To solve a problem on pin-hole incidental to a diffusion film by a method wherein an active layer and a carrier lock-in layer are made convex structures and an impurity is doped from the surface of a substrate into a convex region of the carrier lock-in layer. CONSTITUTION:A P type InGaAsP active layer 10, a P type InP carrier lock-in layer 11 and an N type InP semiconductor layer 12 are formed by turns on an N type InP semiconductor substrate 9, layers 10, 11 at the convex part 17 formed in the substrate 9 are grown in the same form as the substrate 9 and made flat on the surface with the layer 12, and after P<+> diffusion is carried out to be stayed between the surface of the layer 12 and the convex region of the layer 11 and a P<+> conversion region 13 if formed, electrodes 15, 14 respectively are fixed. With such a structure, since the P<+> diffusion requires no diffusion film, the pin-hole question incidental to the diffusion film can completely be solved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16133379A JPS5683982A (en) | 1979-12-12 | 1979-12-12 | Semiconductor light emission element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16133379A JPS5683982A (en) | 1979-12-12 | 1979-12-12 | Semiconductor light emission element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5683982A true JPS5683982A (en) | 1981-07-08 |
| JPS6327872B2 JPS6327872B2 (en) | 1988-06-06 |
Family
ID=15733080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16133379A Granted JPS5683982A (en) | 1979-12-12 | 1979-12-12 | Semiconductor light emission element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5683982A (en) |
-
1979
- 1979-12-12 JP JP16133379A patent/JPS5683982A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327872B2 (en) | 1988-06-06 |
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