JPS5683982A - Semiconductor light emission element - Google Patents

Semiconductor light emission element

Info

Publication number
JPS5683982A
JPS5683982A JP16133379A JP16133379A JPS5683982A JP S5683982 A JPS5683982 A JP S5683982A JP 16133379 A JP16133379 A JP 16133379A JP 16133379 A JP16133379 A JP 16133379A JP S5683982 A JPS5683982 A JP S5683982A
Authority
JP
Japan
Prior art keywords
layer
substrate
diffusion
type inp
carrier lock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16133379A
Other languages
Japanese (ja)
Other versions
JPS6327872B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16133379A priority Critical patent/JPS5683982A/en
Publication of JPS5683982A publication Critical patent/JPS5683982A/en
Publication of JPS6327872B2 publication Critical patent/JPS6327872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To solve a problem on pin-hole incidental to a diffusion film by a method wherein an active layer and a carrier lock-in layer are made convex structures and an impurity is doped from the surface of a substrate into a convex region of the carrier lock-in layer. CONSTITUTION:A P type InGaAsP active layer 10, a P type InP carrier lock-in layer 11 and an N type InP semiconductor layer 12 are formed by turns on an N type InP semiconductor substrate 9, layers 10, 11 at the convex part 17 formed in the substrate 9 are grown in the same form as the substrate 9 and made flat on the surface with the layer 12, and after P<+> diffusion is carried out to be stayed between the surface of the layer 12 and the convex region of the layer 11 and a P<+> conversion region 13 if formed, electrodes 15, 14 respectively are fixed. With such a structure, since the P<+> diffusion requires no diffusion film, the pin-hole question incidental to the diffusion film can completely be solved.
JP16133379A 1979-12-12 1979-12-12 Semiconductor light emission element Granted JPS5683982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16133379A JPS5683982A (en) 1979-12-12 1979-12-12 Semiconductor light emission element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16133379A JPS5683982A (en) 1979-12-12 1979-12-12 Semiconductor light emission element

Publications (2)

Publication Number Publication Date
JPS5683982A true JPS5683982A (en) 1981-07-08
JPS6327872B2 JPS6327872B2 (en) 1988-06-06

Family

ID=15733080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16133379A Granted JPS5683982A (en) 1979-12-12 1979-12-12 Semiconductor light emission element

Country Status (1)

Country Link
JP (1) JPS5683982A (en)

Also Published As

Publication number Publication date
JPS6327872B2 (en) 1988-06-06

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