JPS57198684A - Manufacture of semiconductor device having multilayer semiconductor crystal layer - Google Patents

Manufacture of semiconductor device having multilayer semiconductor crystal layer

Info

Publication number
JPS57198684A
JPS57198684A JP8401081A JP8401081A JPS57198684A JP S57198684 A JPS57198684 A JP S57198684A JP 8401081 A JP8401081 A JP 8401081A JP 8401081 A JP8401081 A JP 8401081A JP S57198684 A JPS57198684 A JP S57198684A
Authority
JP
Japan
Prior art keywords
layer
type
junction
region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8401081A
Other languages
Japanese (ja)
Inventor
Akio Yamaguchi
Ryuichi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8401081A priority Critical patent/JPS57198684A/en
Publication of JPS57198684A publication Critical patent/JPS57198684A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Abstract

PURPOSE:To form an n-n-n region in an n-p-n junction without using a mask and also to form a p-p-p region in a p-n-p junction, by forming the n-p-n or p-n-p junction, trereafter irradiating laser light at a desired position, and locally diffusing impurities. CONSTITUTION:On an n<+> type InP substrate 1, an n type InP clad layer 2, an undoped n<-> type active layer 3 having the carrier concentration of about 5X10<16>/ cm<2>, a p type clad layer 4, an n type current limiting layer 5, and a p type cap layer 6 are layered and epitaxially grown in a liquid phase. Thus a laser element having the p-n-p structure is obtained. Then, YAG laser light, whose energy is larger than the band gap energy of the layer 6 and smaller than the energy of the layers 1-5 and which has a diameter of about 1.5mum, is irradiated to heat the layer 6. The impurities in the layer 6 are diffused, and a p type reversed region 9 is formed in the part of the layer 5. Thereafter the substrate 1 is polished to obtain the total thickness of about 150mum. An AuGe electrode 8 is deposited on the back surface of the substrate 1, and an Au-Zn electrode 7 is deposited on the layer 6.
JP8401081A 1981-06-01 1981-06-01 Manufacture of semiconductor device having multilayer semiconductor crystal layer Pending JPS57198684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8401081A JPS57198684A (en) 1981-06-01 1981-06-01 Manufacture of semiconductor device having multilayer semiconductor crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8401081A JPS57198684A (en) 1981-06-01 1981-06-01 Manufacture of semiconductor device having multilayer semiconductor crystal layer

Publications (1)

Publication Number Publication Date
JPS57198684A true JPS57198684A (en) 1982-12-06

Family

ID=13818618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8401081A Pending JPS57198684A (en) 1981-06-01 1981-06-01 Manufacture of semiconductor device having multilayer semiconductor crystal layer

Country Status (1)

Country Link
JP (1) JPS57198684A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63222488A (en) * 1987-03-11 1988-09-16 Rohm Co Ltd Manufacture of semiconductor laser
JPS63222489A (en) * 1987-03-11 1988-09-16 Rohm Co Ltd Manufacture of semiconductor laser
JPH02194683A (en) * 1989-01-24 1990-08-01 Rohm Co Ltd Semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63222488A (en) * 1987-03-11 1988-09-16 Rohm Co Ltd Manufacture of semiconductor laser
JPS63222489A (en) * 1987-03-11 1988-09-16 Rohm Co Ltd Manufacture of semiconductor laser
JPH02194683A (en) * 1989-01-24 1990-08-01 Rohm Co Ltd Semiconductor laser

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