JPS57198684A - Manufacture of semiconductor device having multilayer semiconductor crystal layer - Google Patents
Manufacture of semiconductor device having multilayer semiconductor crystal layerInfo
- Publication number
- JPS57198684A JPS57198684A JP8401081A JP8401081A JPS57198684A JP S57198684 A JPS57198684 A JP S57198684A JP 8401081 A JP8401081 A JP 8401081A JP 8401081 A JP8401081 A JP 8401081A JP S57198684 A JPS57198684 A JP S57198684A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- junction
- region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To form an n-n-n region in an n-p-n junction without using a mask and also to form a p-p-p region in a p-n-p junction, by forming the n-p-n or p-n-p junction, trereafter irradiating laser light at a desired position, and locally diffusing impurities. CONSTITUTION:On an n<+> type InP substrate 1, an n type InP clad layer 2, an undoped n<-> type active layer 3 having the carrier concentration of about 5X10<16>/ cm<2>, a p type clad layer 4, an n type current limiting layer 5, and a p type cap layer 6 are layered and epitaxially grown in a liquid phase. Thus a laser element having the p-n-p structure is obtained. Then, YAG laser light, whose energy is larger than the band gap energy of the layer 6 and smaller than the energy of the layers 1-5 and which has a diameter of about 1.5mum, is irradiated to heat the layer 6. The impurities in the layer 6 are diffused, and a p type reversed region 9 is formed in the part of the layer 5. Thereafter the substrate 1 is polished to obtain the total thickness of about 150mum. An AuGe electrode 8 is deposited on the back surface of the substrate 1, and an Au-Zn electrode 7 is deposited on the layer 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8401081A JPS57198684A (en) | 1981-06-01 | 1981-06-01 | Manufacture of semiconductor device having multilayer semiconductor crystal layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8401081A JPS57198684A (en) | 1981-06-01 | 1981-06-01 | Manufacture of semiconductor device having multilayer semiconductor crystal layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57198684A true JPS57198684A (en) | 1982-12-06 |
Family
ID=13818618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8401081A Pending JPS57198684A (en) | 1981-06-01 | 1981-06-01 | Manufacture of semiconductor device having multilayer semiconductor crystal layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57198684A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63222488A (en) * | 1987-03-11 | 1988-09-16 | Rohm Co Ltd | Manufacture of semiconductor laser |
JPS63222489A (en) * | 1987-03-11 | 1988-09-16 | Rohm Co Ltd | Manufacture of semiconductor laser |
JPH02194683A (en) * | 1989-01-24 | 1990-08-01 | Rohm Co Ltd | Semiconductor laser |
-
1981
- 1981-06-01 JP JP8401081A patent/JPS57198684A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63222488A (en) * | 1987-03-11 | 1988-09-16 | Rohm Co Ltd | Manufacture of semiconductor laser |
JPS63222489A (en) * | 1987-03-11 | 1988-09-16 | Rohm Co Ltd | Manufacture of semiconductor laser |
JPH02194683A (en) * | 1989-01-24 | 1990-08-01 | Rohm Co Ltd | Semiconductor laser |
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