JPS56126915A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56126915A
JPS56126915A JP3062480A JP3062480A JPS56126915A JP S56126915 A JPS56126915 A JP S56126915A JP 3062480 A JP3062480 A JP 3062480A JP 3062480 A JP3062480 A JP 3062480A JP S56126915 A JPS56126915 A JP S56126915A
Authority
JP
Japan
Prior art keywords
mesa
poly
irradiated
smooth
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3062480A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3062480A priority Critical patent/JPS56126915A/en
Priority to US06/240,130 priority patent/US4381201A/en
Priority to EP81101579A priority patent/EP0036137B1/en
Priority to DE8181101579T priority patent/DE3168424D1/en
Publication of JPS56126915A publication Critical patent/JPS56126915A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To smooth an end section of a mesa and prevent disconnection by a method wherein a mesa-shaped polycrystal or amorphous semiconductor layer is formed on a substrate, and lasers or electron rays are irradiated. CONSTITUTION:A poly Si layer is made up on an Si substrate 1 through a thermal oxide film, and poly Si 3 is cut in a mesa shape by means of a normal photoengraving process. The poly Si is scanned and irradiated by laser beams, and changed into a monocrystal. According to this operation, an end edge of a mesa is melted and turned into a smooth and circular shape, and the disconnection of wiring is prevented.
JP3062480A 1980-03-11 1980-03-11 Manufacture of semiconductor device Pending JPS56126915A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3062480A JPS56126915A (en) 1980-03-11 1980-03-11 Manufacture of semiconductor device
US06/240,130 US4381201A (en) 1980-03-11 1981-03-03 Method for production of semiconductor devices
EP81101579A EP0036137B1 (en) 1980-03-11 1981-03-05 Method for production of semiconductor devices
DE8181101579T DE3168424D1 (en) 1980-03-11 1981-03-05 Method for production of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3062480A JPS56126915A (en) 1980-03-11 1980-03-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56126915A true JPS56126915A (en) 1981-10-05

Family

ID=12309004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3062480A Pending JPS56126915A (en) 1980-03-11 1980-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56126915A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893217A (en) * 1981-11-30 1983-06-02 Toshiba Corp Manufacture of semiconductor crystal film
JPS58116722A (en) * 1981-12-29 1983-07-12 Fujitsu Ltd Preparation of semiconductor device
US6751114B2 (en) 2002-03-28 2004-06-15 Micron Technology, Inc. Method for programming a memory cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1979 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893217A (en) * 1981-11-30 1983-06-02 Toshiba Corp Manufacture of semiconductor crystal film
JPS58116722A (en) * 1981-12-29 1983-07-12 Fujitsu Ltd Preparation of semiconductor device
US6751114B2 (en) 2002-03-28 2004-06-15 Micron Technology, Inc. Method for programming a memory cell

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