JPS5678154A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5678154A JPS5678154A JP15460179A JP15460179A JPS5678154A JP S5678154 A JPS5678154 A JP S5678154A JP 15460179 A JP15460179 A JP 15460179A JP 15460179 A JP15460179 A JP 15460179A JP S5678154 A JPS5678154 A JP S5678154A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- type
- regions
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 230000004913 activation Effects 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To enable to increase an action speed of a I<2>L having Schottky barrier diode, by a method wherein the insulation of a wiring material by anode formation and the electric activation of an ion pouring layer by laser irradiation are utilized. CONSTITUTION:A type N<+> submerged layer 12 is formed in a type P<-> Si substrate, and a type N layer 13 is epitaxially grown on the whole surface including the layer 12. The periphery side of the layer 13 is sorrounded with a SiO2 film 15, a SiO2 film 14 is adhered to the surface of the layer 13. The film 14 is then patterned and the remaining film 14 is masked. An ion B is pured thereinto, and type P regions 16a and 16b are formed at the bottom of the layer 13 at both sides of the film 14. Afterwards, a thermal pocess is performed in a nitogen atmosphere for activation of the regions 16a and 16b, and a Al wiring 18 is formed on the layer 13 corresponding to the region 16a. Anode formation takes place to change only the outer layer of the wiring 18 into a Al2O3 film 18a. The remaining film 14 and film 18a are then masked, and an ion is poured thereinto for forming type P<+> regions 17a and 17b at the periphery of the region 16a and on the region 16b, respectively. Said regions are irradiated with laser light for activation.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15460179A JPS5678154A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor device |
| DE8080107315T DE3071489D1 (en) | 1979-11-29 | 1980-11-24 | Method of manufacturing a semiconductor device with a schottky junction |
| EP80107315A EP0029986B1 (en) | 1979-11-29 | 1980-11-24 | Method of manufacturing a semiconductor device with a schottky junction |
| US06/210,749 US4338139A (en) | 1979-11-29 | 1980-11-26 | Method of forming Schottky-I2 L devices by implantation and laser bombardment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15460179A JPS5678154A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5678154A true JPS5678154A (en) | 1981-06-26 |
| JPS639668B2 JPS639668B2 (en) | 1988-03-01 |
Family
ID=15587741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15460179A Granted JPS5678154A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678154A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60240156A (en) * | 1984-05-14 | 1985-11-29 | Agency Of Ind Science & Technol | Radiation resisting semiconductor integrated circuit device |
-
1979
- 1979-11-29 JP JP15460179A patent/JPS5678154A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60240156A (en) * | 1984-05-14 | 1985-11-29 | Agency Of Ind Science & Technol | Radiation resisting semiconductor integrated circuit device |
| JPH0467341B2 (en) * | 1984-05-14 | 1992-10-28 | Kogyo Gijutsuin |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS639668B2 (en) | 1988-03-01 |
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