JPS5678153A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5678153A JPS5678153A JP15460079A JP15460079A JPS5678153A JP S5678153 A JPS5678153 A JP S5678153A JP 15460079 A JP15460079 A JP 15460079A JP 15460079 A JP15460079 A JP 15460079A JP S5678153 A JPS5678153 A JP S5678153A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- region
- film
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000004913 activation Effects 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To enable to perform a rapid switching operation of an I<2>L equipped with a schottky.barrier.diode, by a method wherein the insulation of wiring material by anode formation and the electric activation of an ion pouring layer by laser irradiation are utilized. CONSTITUTION:A type N<+> submerged layer 12 is formed in a type P<-> Si substrate, and a type N layer 13 is epitaxially grown on the whole surface including the layer 12. The sides of the layers 12 and 13 are surrounded with an SiO2 film 15, and an SiO2 film 14 is adhered to the surface of the layer 13. The film 14 is patterned to form a mask, and an ion B<+> is poured to form two type P regions 16a and 16b at intervals. A No.1 Al wiring material 18 is placed on the layer 13 corresponding to the region 16a. Afterwards, the remaining film 14 and wiring 18 are masked and an ion is poured alike to form a type P<+> region 17a on the periphery of the region 16a and a type P<+> region 17b on the region 16b also. They are activated by irradiating with laser light. The surface of the wiring 18 is then changed into an Al2O3 film 18a by anode-forming, and No.2 Al wirings 20a and 20b are adhered to the regions 17a and 17b, respectively.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15460079A JPS5678153A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor device |
| DE8080107315T DE3071489D1 (en) | 1979-11-29 | 1980-11-24 | Method of manufacturing a semiconductor device with a schottky junction |
| EP80107315A EP0029986B1 (en) | 1979-11-29 | 1980-11-24 | Method of manufacturing a semiconductor device with a schottky junction |
| US06/210,749 US4338139A (en) | 1979-11-29 | 1980-11-26 | Method of forming Schottky-I2 L devices by implantation and laser bombardment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15460079A JPS5678153A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5678153A true JPS5678153A (en) | 1981-06-26 |
| JPH0210584B2 JPH0210584B2 (en) | 1990-03-08 |
Family
ID=15587721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15460079A Granted JPS5678153A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678153A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54154601A (en) * | 1978-05-27 | 1979-12-05 | Dainippon Printing Co Ltd | Method of making paper pattern |
-
1979
- 1979-11-29 JP JP15460079A patent/JPS5678153A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54154601A (en) * | 1978-05-27 | 1979-12-05 | Dainippon Printing Co Ltd | Method of making paper pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0210584B2 (en) | 1990-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5636143A (en) | Manufacture of semiconductor device | |
| JPS5678153A (en) | Manufacture of semiconductor device | |
| JPS5333050A (en) | Production of semiconductor element | |
| JPS5678154A (en) | Manufacture of semiconductor device | |
| JPS5635434A (en) | Manufacturing of semiconductor device | |
| JPS5723218A (en) | Manufacture of semiconductor device | |
| JPS5656648A (en) | Manufacture of semiconductor device | |
| JPS5673447A (en) | Manufacture of semiconductor device | |
| JPS5513953A (en) | Complementary integrated circuit | |
| JPS56126915A (en) | Manufacture of semiconductor device | |
| JPS56146231A (en) | Manufacture of semiconductor device | |
| JPS55105332A (en) | Manufacture of semiconductor device | |
| JPS56105651A (en) | Manufacture of semiconductor device | |
| JPS56105663A (en) | Manufacture of ic device by complementary type field effect transistor | |
| JPS57128062A (en) | Semiconductor device and manufacture thereof | |
| JPS55132052A (en) | Semiconductor device | |
| JPS5693370A (en) | Manufacture of mos-type semiconductor device | |
| JPS54139486A (en) | Manufacture of semiconductor device | |
| JPS56135967A (en) | Manufacture of semiconductor device | |
| JPS5595374A (en) | Semiconductor device | |
| JPS577154A (en) | Preparation of semiconductor device | |
| JPS56144533A (en) | Manufacture of semiconductor device | |
| JPS5693312A (en) | Manufacture of semiconductor device | |
| JPS57128061A (en) | Semiconductor device and manufacture thereof | |
| JPS53112077A (en) | Production of semiconductor laser |