JPS53112077A - Production of semiconductor laser - Google Patents

Production of semiconductor laser

Info

Publication number
JPS53112077A
JPS53112077A JP2679877A JP2679877A JPS53112077A JP S53112077 A JPS53112077 A JP S53112077A JP 2679877 A JP2679877 A JP 2679877A JP 2679877 A JP2679877 A JP 2679877A JP S53112077 A JPS53112077 A JP S53112077A
Authority
JP
Japan
Prior art keywords
production
semiconductor laser
dicing
chips
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2679877A
Other languages
Japanese (ja)
Inventor
Etsuji Omura
Kenji Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2679877A priority Critical patent/JPS53112077A/en
Publication of JPS53112077A publication Critical patent/JPS53112077A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To produce a laser of good heat radiation effect by providing an insulation film mask on the electrodes of dicing regions of respective chips, forming a metal layer, thereafter removing the mask and dicing the substrate to chips.
JP2679877A 1977-03-10 1977-03-10 Production of semiconductor laser Pending JPS53112077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2679877A JPS53112077A (en) 1977-03-10 1977-03-10 Production of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2679877A JPS53112077A (en) 1977-03-10 1977-03-10 Production of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS53112077A true JPS53112077A (en) 1978-09-30

Family

ID=12203326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2679877A Pending JPS53112077A (en) 1977-03-10 1977-03-10 Production of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS53112077A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186855A (en) * 2007-01-26 2008-08-14 Nichia Chem Ind Ltd Semiconductor laser element, semiconductor laser device and manufacturing method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186855A (en) * 2007-01-26 2008-08-14 Nichia Chem Ind Ltd Semiconductor laser element, semiconductor laser device and manufacturing method therefor

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