JPS54162982A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54162982A JPS54162982A JP7251678A JP7251678A JPS54162982A JP S54162982 A JPS54162982 A JP S54162982A JP 7251678 A JP7251678 A JP 7251678A JP 7251678 A JP7251678 A JP 7251678A JP S54162982 A JPS54162982 A JP S54162982A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- sio
- type
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain the microscale pattern to secure a high density by giving the function of the stopper to the insulated layer formed on the lst semiconductor layer and thus reducing the step difference on the surface.
CONSTITUTION: Si3N4 film 22 is coated on P-type Si substrate 21, and the both ends of film 22 is cut away. Then thick field SiO2 film 3 containing bird head 231 is caused at the cut areas through the heat treatment. Then film 22 is removed with thin gate SiO2 film 24 coated there, and then the window is drilled. And N-type lst poly-crystal Si layer 27 is grown over the entire surface. The entire surface is then covered with SiO2 film 28 with window 29, 30 formed, and N-type 2nd poly-crystal Si layer 32, Si3N4 film 33 and SiO2 film 34 are coated in lamination. The N the aperture reaching film 28 is formed the above lamination layer through the photo- lithography method, and then the phosphorus ion is injected to form N-type source and drain regions 35 and 36. Film 34 is then removed along with film 33 excluding contact regions 331W333, and the exposed areas of layer 27 and 32 are changed into the SiO2 film to function as the stopper. At the same time, the depth is increased for region 35 and 36.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7251678A JPS5917538B2 (en) | 1978-06-14 | 1978-06-14 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7251678A JPS5917538B2 (en) | 1978-06-14 | 1978-06-14 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54162982A true JPS54162982A (en) | 1979-12-25 |
JPS5917538B2 JPS5917538B2 (en) | 1984-04-21 |
Family
ID=13491570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7251678A Expired JPS5917538B2 (en) | 1978-06-14 | 1978-06-14 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5917538B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5893369A (en) * | 1981-11-30 | 1983-06-03 | Nec Corp | Semiconductor device |
JPH04218957A (en) * | 1990-03-05 | 1992-08-10 | Fujitsu Ltd | High withstand-voltage mos transistor and its manufacture and semiconductor device and its manufacture |
-
1978
- 1978-06-14 JP JP7251678A patent/JPS5917538B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5893369A (en) * | 1981-11-30 | 1983-06-03 | Nec Corp | Semiconductor device |
JPH04218957A (en) * | 1990-03-05 | 1992-08-10 | Fujitsu Ltd | High withstand-voltage mos transistor and its manufacture and semiconductor device and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS5917538B2 (en) | 1984-04-21 |
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