JPS54162982A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54162982A
JPS54162982A JP7251678A JP7251678A JPS54162982A JP S54162982 A JPS54162982 A JP S54162982A JP 7251678 A JP7251678 A JP 7251678A JP 7251678 A JP7251678 A JP 7251678A JP S54162982 A JPS54162982 A JP S54162982A
Authority
JP
Japan
Prior art keywords
film
layer
sio
type
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7251678A
Other languages
Japanese (ja)
Other versions
JPS5917538B2 (en
Inventor
Eisuke Ichinohe
Onori Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7251678A priority Critical patent/JPS5917538B2/en
Publication of JPS54162982A publication Critical patent/JPS54162982A/en
Publication of JPS5917538B2 publication Critical patent/JPS5917538B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the microscale pattern to secure a high density by giving the function of the stopper to the insulated layer formed on the lst semiconductor layer and thus reducing the step difference on the surface.
CONSTITUTION: Si3N4 film 22 is coated on P-type Si substrate 21, and the both ends of film 22 is cut away. Then thick field SiO2 film 3 containing bird head 231 is caused at the cut areas through the heat treatment. Then film 22 is removed with thin gate SiO2 film 24 coated there, and then the window is drilled. And N-type lst poly-crystal Si layer 27 is grown over the entire surface. The entire surface is then covered with SiO2 film 28 with window 29, 30 formed, and N-type 2nd poly-crystal Si layer 32, Si3N4 film 33 and SiO2 film 34 are coated in lamination. The N the aperture reaching film 28 is formed the above lamination layer through the photo- lithography method, and then the phosphorus ion is injected to form N-type source and drain regions 35 and 36. Film 34 is then removed along with film 33 excluding contact regions 331W333, and the exposed areas of layer 27 and 32 are changed into the SiO2 film to function as the stopper. At the same time, the depth is increased for region 35 and 36.
COPYRIGHT: (C)1979,JPO&Japio
JP7251678A 1978-06-14 1978-06-14 Manufacturing method of semiconductor device Expired JPS5917538B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7251678A JPS5917538B2 (en) 1978-06-14 1978-06-14 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7251678A JPS5917538B2 (en) 1978-06-14 1978-06-14 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54162982A true JPS54162982A (en) 1979-12-25
JPS5917538B2 JPS5917538B2 (en) 1984-04-21

Family

ID=13491570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7251678A Expired JPS5917538B2 (en) 1978-06-14 1978-06-14 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5917538B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893369A (en) * 1981-11-30 1983-06-03 Nec Corp Semiconductor device
JPH04218957A (en) * 1990-03-05 1992-08-10 Fujitsu Ltd High withstand-voltage mos transistor and its manufacture and semiconductor device and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893369A (en) * 1981-11-30 1983-06-03 Nec Corp Semiconductor device
JPH04218957A (en) * 1990-03-05 1992-08-10 Fujitsu Ltd High withstand-voltage mos transistor and its manufacture and semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPS5917538B2 (en) 1984-04-21

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