JPS6436029A - Formation of pattern of polycrystalline semiconductor thin film - Google Patents
Formation of pattern of polycrystalline semiconductor thin filmInfo
- Publication number
- JPS6436029A JPS6436029A JP19045387A JP19045387A JPS6436029A JP S6436029 A JPS6436029 A JP S6436029A JP 19045387 A JP19045387 A JP 19045387A JP 19045387 A JP19045387 A JP 19045387A JP S6436029 A JPS6436029 A JP S6436029A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- polycrystalline semiconductor
- polycrystalline
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE:To reduce a material and a duration for manufacturing a semiconductor device by a method wherein only a necessary part of an amorphous semiconductor thin film is irradiated selectively with a laser beam and is etched and only a polycrystalline part is left by making use of a phenomenon that an etching speed at an amorphous part is faster than at a crystallized part. CONSTITUTION:A passivating film 2 and an amorphous semiconductor thin film 3 are laminated on a substrate 1; only a necessary part is irradiated selectively with a laser beam 4; the amorphous semiconductor thin film 3 is crystallized; a polycrystalline semiconductor thin film 6 is formed. When an etching operation is executed, a part of the amorphous semiconductor thin film whose etching speed is faster than a part of the polycrystalline semiconductor thin film 6 is etched faster; when this does not happen, the etching operation is completed. By this setup, only a part of the polycrystalline semiconductor thin film 6 whose etching speed is slow is left; a polycrystalline semiconductor thin film 8 of a desired pattern is formed. During this process, the polycrystalline semiconductor thin film itself is etched; its film thickness is reduced; the film thickness of the amorphous semiconductor thin film 3 is made thicker in advance in consideration of the film thickness to be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19045387A JPS6436029A (en) | 1987-07-31 | 1987-07-31 | Formation of pattern of polycrystalline semiconductor thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19045387A JPS6436029A (en) | 1987-07-31 | 1987-07-31 | Formation of pattern of polycrystalline semiconductor thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6436029A true JPS6436029A (en) | 1989-02-07 |
Family
ID=16258378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19045387A Pending JPS6436029A (en) | 1987-07-31 | 1987-07-31 | Formation of pattern of polycrystalline semiconductor thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6436029A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02232925A (en) * | 1989-03-06 | 1990-09-14 | Nec Corp | Selective etching of amorphous silicon |
US5293749A (en) * | 1988-11-09 | 1994-03-15 | Mitsubishi Denki Kabushiki Kaisha | Multi-stage cold accumulation type refrigerator and cooling device including the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59182529A (en) * | 1983-04-01 | 1984-10-17 | Hitachi Ltd | Pattern formation of semiconductor layer |
JPS61150337A (en) * | 1984-12-25 | 1986-07-09 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1987
- 1987-07-31 JP JP19045387A patent/JPS6436029A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59182529A (en) * | 1983-04-01 | 1984-10-17 | Hitachi Ltd | Pattern formation of semiconductor layer |
JPS61150337A (en) * | 1984-12-25 | 1986-07-09 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5293749A (en) * | 1988-11-09 | 1994-03-15 | Mitsubishi Denki Kabushiki Kaisha | Multi-stage cold accumulation type refrigerator and cooling device including the same |
JPH02232925A (en) * | 1989-03-06 | 1990-09-14 | Nec Corp | Selective etching of amorphous silicon |
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