JPS5637630A - Formation of thin film - Google Patents

Formation of thin film

Info

Publication number
JPS5637630A
JPS5637630A JP11370979A JP11370979A JPS5637630A JP S5637630 A JPS5637630 A JP S5637630A JP 11370979 A JP11370979 A JP 11370979A JP 11370979 A JP11370979 A JP 11370979A JP S5637630 A JPS5637630 A JP S5637630A
Authority
JP
Japan
Prior art keywords
psg9
thin film
film
applying
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11370979A
Other languages
Japanese (ja)
Inventor
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11370979A priority Critical patent/JPS5637630A/en
Publication of JPS5637630A publication Critical patent/JPS5637630A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain thin film patterns having flat and photoetched surfaces by applying a lift-off method wherein the reverse use of side face photoetching is also applied and a photoetching process causing no side face photoetching is combined. CONSTITUTION:An SiO27, an Si3N48 and a PSG9 are stacked on an Si substrate 1 and a resist mask 10' is formed. The mask 10' generates a flawed section by developing treatment. An ion is vertically irradiated on the substrate to selectively remove the PSG9. Mext, Al is evaporated with the same thickness of the remaining PSG9' to form Al patterns 12a, 12b. Next, the resist 10' is removed by applying an ultrasonic wave in acetone to remove an Al film 12. And a semiconductor chip having an Al film with a flat surface will be obtained and the accident of the breakage of a wire will be prevented.
JP11370979A 1979-09-05 1979-09-05 Formation of thin film Pending JPS5637630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11370979A JPS5637630A (en) 1979-09-05 1979-09-05 Formation of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11370979A JPS5637630A (en) 1979-09-05 1979-09-05 Formation of thin film

Publications (1)

Publication Number Publication Date
JPS5637630A true JPS5637630A (en) 1981-04-11

Family

ID=14619166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11370979A Pending JPS5637630A (en) 1979-09-05 1979-09-05 Formation of thin film

Country Status (1)

Country Link
JP (1) JPS5637630A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7575853B2 (en) 2004-04-08 2009-08-18 Tdk Corporation Method of forming thin film pattern and method of forming magnetoresistive element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5173877A (en) * 1974-12-23 1976-06-26 Fujitsu Ltd HANDOTAISOCHINOSEIZOHOHO
JPS52119875A (en) * 1976-03-31 1977-10-07 Fujitsu Ltd Formation of isolation area
JPS53147531A (en) * 1977-05-27 1978-12-22 Mitsubishi Electric Corp Forming method for thin film pattern
JPS5452473A (en) * 1977-10-03 1979-04-25 Mitsubishi Electric Corp Forming method for coating for fine pattern

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5173877A (en) * 1974-12-23 1976-06-26 Fujitsu Ltd HANDOTAISOCHINOSEIZOHOHO
JPS52119875A (en) * 1976-03-31 1977-10-07 Fujitsu Ltd Formation of isolation area
JPS53147531A (en) * 1977-05-27 1978-12-22 Mitsubishi Electric Corp Forming method for thin film pattern
JPS5452473A (en) * 1977-10-03 1979-04-25 Mitsubishi Electric Corp Forming method for coating for fine pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7575853B2 (en) 2004-04-08 2009-08-18 Tdk Corporation Method of forming thin film pattern and method of forming magnetoresistive element

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