JPS5643729A - Formation of fine pattern - Google Patents

Formation of fine pattern

Info

Publication number
JPS5643729A
JPS5643729A JP11987479A JP11987479A JPS5643729A JP S5643729 A JPS5643729 A JP S5643729A JP 11987479 A JP11987479 A JP 11987479A JP 11987479 A JP11987479 A JP 11987479A JP S5643729 A JPS5643729 A JP S5643729A
Authority
JP
Japan
Prior art keywords
resin
layer
pattern
photosensitive
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11987479A
Other languages
Japanese (ja)
Inventor
Toshio Sugawa
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11987479A priority Critical patent/JPS5643729A/en
Publication of JPS5643729A publication Critical patent/JPS5643729A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain an electrode of a fine pattern by a method wherein the first resin, an insulating material layer and the second photosensitive resin of desired pattern are laminated successively and an window on the first resin is enlarged after the two layers underneath it have been selectively removed using the second resin as a mask. CONSTITUTION:An N type GaAs layer 2, the first photosensitive layer resin 3, an Si3N4 film 4 and the second photosensitive resin layer 5 are laminated successively, and the resin 5 are exposed and developed into a desired pattern. Using this pattern 5 as a mask, films 4 and 3 are selectively etched successively using a reacting sputtering method, the windows 3 and 5 are enlarged by exposing films 4 and 3 in O2 plasma, a gold layer 7 is coated and the resin 3 is removed. As a result, a fine electrode pattern can be formed using lift-off method.
JP11987479A 1979-09-18 1979-09-18 Formation of fine pattern Pending JPS5643729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11987479A JPS5643729A (en) 1979-09-18 1979-09-18 Formation of fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11987479A JPS5643729A (en) 1979-09-18 1979-09-18 Formation of fine pattern

Publications (1)

Publication Number Publication Date
JPS5643729A true JPS5643729A (en) 1981-04-22

Family

ID=14772379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11987479A Pending JPS5643729A (en) 1979-09-18 1979-09-18 Formation of fine pattern

Country Status (1)

Country Link
JP (1) JPS5643729A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584930A (en) * 1981-06-30 1983-01-12 Fujitsu Ltd Removing method of photoresist
JPS5892224A (en) * 1981-11-27 1983-06-01 Matsushita Electronics Corp Pattern formation
JPS58145128A (en) * 1982-02-22 1983-08-29 Nec Corp Formation of photo resist stencil
JPS613489A (en) * 1984-06-18 1986-01-09 Fujitsu Ltd Manufacture of semiconductor device
JPH0294466A (en) * 1988-09-16 1990-04-05 Samsung Electron Co Ltd Double-capacitor and its manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038059A (en) * 1973-07-31 1975-04-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038059A (en) * 1973-07-31 1975-04-09

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584930A (en) * 1981-06-30 1983-01-12 Fujitsu Ltd Removing method of photoresist
JPS5892224A (en) * 1981-11-27 1983-06-01 Matsushita Electronics Corp Pattern formation
JPS58145128A (en) * 1982-02-22 1983-08-29 Nec Corp Formation of photo resist stencil
JPS613489A (en) * 1984-06-18 1986-01-09 Fujitsu Ltd Manufacture of semiconductor device
JPH0294466A (en) * 1988-09-16 1990-04-05 Samsung Electron Co Ltd Double-capacitor and its manufacture

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