JPS5769783A - Formation of multilayer thin film pattern - Google Patents

Formation of multilayer thin film pattern

Info

Publication number
JPS5769783A
JPS5769783A JP55146659A JP14665980A JPS5769783A JP S5769783 A JPS5769783 A JP S5769783A JP 55146659 A JP55146659 A JP 55146659A JP 14665980 A JP14665980 A JP 14665980A JP S5769783 A JPS5769783 A JP S5769783A
Authority
JP
Japan
Prior art keywords
thin film
pattern
film pattern
resist
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55146659A
Other languages
Japanese (ja)
Other versions
JPS5928068B2 (en
Inventor
Kazumi Komiya
Mitsuo Imamura
Noboru Yoshigami
Hiromitsu Taniguchi
Toshio Yamashita
Masaru Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MATSUSHITA DENSOU KIKI KK
Nippon Telegraph and Telephone Corp
Panasonic System Solutions Japan Co Ltd
Panasonic Holdings Corp
Original Assignee
MATSUSHITA DENSOU KIKI KK
Matsushita Graphic Communication Systems Inc
Nippon Telegraph and Telephone Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MATSUSHITA DENSOU KIKI KK, Matsushita Graphic Communication Systems Inc, Nippon Telegraph and Telephone Corp, Matsushita Electric Industrial Co Ltd filed Critical MATSUSHITA DENSOU KIKI KK
Priority to JP55146659A priority Critical patent/JPS5928068B2/en
Publication of JPS5769783A publication Critical patent/JPS5769783A/en
Publication of JPS5928068B2 publication Critical patent/JPS5928068B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation

Abstract

PURPOSE:To obtain an optoelectric transducer having favorable characteristic with no discrepancy of pattern by a method wherein a thin film pattern consisting of two layers formed by utilzing a negative type photo resist and exposure from the back is formed. CONSTITUTION:The first thin film pattern 3 of CdS, etc., is formed on a transparent substrate 1, the whole surface thereof is covered with a negative type photo resist, the substrate 1 is exposed from the back side, and the non-exposed parts are removed to form resist patterns 28. Then the second thin film 9, 10 of CdSe, etc., are provided on the whole surface, the resist 28 and the second thin film 10 are removed by the lift off technique, and activation treatment is peformed to form a photoconductive thin film consisting of a solid solution of the first thin film 3 and the second thin film 9, and electrodes are provided respectively. Accordingly the photoconductive thin film having the optional pattern can be formed favorably without discrepancy of pattern.
JP55146659A 1980-10-20 1980-10-20 Method of forming photoconductive thin film Expired JPS5928068B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55146659A JPS5928068B2 (en) 1980-10-20 1980-10-20 Method of forming photoconductive thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55146659A JPS5928068B2 (en) 1980-10-20 1980-10-20 Method of forming photoconductive thin film

Publications (2)

Publication Number Publication Date
JPS5769783A true JPS5769783A (en) 1982-04-28
JPS5928068B2 JPS5928068B2 (en) 1984-07-10

Family

ID=15412714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55146659A Expired JPS5928068B2 (en) 1980-10-20 1980-10-20 Method of forming photoconductive thin film

Country Status (1)

Country Link
JP (1) JPS5928068B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231855A (en) * 1983-06-14 1984-12-26 Matsushita Electric Ind Co Ltd Manufacture of photoelectric conversion device
GB2430797A (en) * 2005-09-28 2007-04-04 Macron Internat Group Ltd A method of making a photoresistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231855A (en) * 1983-06-14 1984-12-26 Matsushita Electric Ind Co Ltd Manufacture of photoelectric conversion device
JPH0251264B2 (en) * 1983-06-14 1990-11-06 Matsushita Electric Ind Co Ltd
GB2430797A (en) * 2005-09-28 2007-04-04 Macron Internat Group Ltd A method of making a photoresistor

Also Published As

Publication number Publication date
JPS5928068B2 (en) 1984-07-10

Similar Documents

Publication Publication Date Title
JPS5769783A (en) Formation of multilayer thin film pattern
JPS5255869A (en) Production of semiconductor device
EP0098922A3 (en) Process for selectively generating positive and negative resist patterns from a single exposure pattern
EP0517923A4 (en) Method of forming minute resist pattern
JPS56163270A (en) Etching method for metallic plate
JPS55157737A (en) Resist pattern forming method for photofabrication
JPS54134561A (en) Pattern forming method
JPS5742043A (en) Photosensitive material
JPS57190366A (en) Manufacture of semiconductor pressure sensor
JPS5643729A (en) Formation of fine pattern
JPS5646230A (en) Exposing method
JPS53147531A (en) Forming method for thin film pattern
JPS5574544A (en) Photo mask correcting method
EP0136534A3 (en) Method of forming a large surface area integrated circuit
JPS5763829A (en) Pattern forming method
JPS56137622A (en) Forming of cross pattern electrode
JPS5655950A (en) Photographic etching method
JPS57118641A (en) Lifting-off method
JPS5713740A (en) Forming method for conductor pattern
JPS6472163A (en) Formation of thin film pattern
JPS5681844A (en) Production of photomask for ic with airflow passage
JPS5417840A (en) Film forming method
SU648933A1 (en) Method of manufacturing photostensils by contact photoprinting technique
JPS6465842A (en) Photolithography
JPS5618429A (en) Minute electrode formation