GB2430797A - A method of making a photoresistor - Google Patents
A method of making a photoresistor Download PDFInfo
- Publication number
- GB2430797A GB2430797A GB0519746A GB0519746A GB2430797A GB 2430797 A GB2430797 A GB 2430797A GB 0519746 A GB0519746 A GB 0519746A GB 0519746 A GB0519746 A GB 0519746A GB 2430797 A GB2430797 A GB 2430797A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photosensitive material
- photoresistor
- electrode
- substrate
- cadmium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 4
- 239000000463 material Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000007921 spray Substances 0.000 claims abstract description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000000873 masking effect Effects 0.000 claims abstract description 6
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 4
- 229940065285 cadmium compound Drugs 0.000 claims abstract description 3
- 150000001662 cadmium compounds Chemical class 0.000 claims abstract description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 11
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 11
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000001556 precipitation Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 231100000614 poison Toxicity 0.000 abstract description 4
- 230000007096 poisonous effect Effects 0.000 abstract description 4
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermistors And Varistors (AREA)
- Chemically Coating (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
A method of making a photoresistor by providing a substrate 2 and forming thereon a photosensitive material 3 in a desired pattern 7 by a masking spray method. An electrode (6, fig 3) is subsequently applied to the photosensitive material following the same pattern. The substrate can be a ceramic material, the photosensitive material can be a cadmium compound such as cadmium sulphide or selenide and the electrode can be made from tin. The method reduces the amount of poisonous photosensitive material needed to form the photoresistor.
Description
I
DEPOSITION
The invention relates to deposition, particularly of a relatively poisonous material to form a photoresistor.
A photoresistor is one type of a photoelectric semiconductor component. The electrical resistance of a photoresistor changes as incident light falling on it varies in intensity.
Such a characteristic provides for the photoresistor to act as a circuit control for electrical circuits. The principal material employed in the making of photoresistors are Cadmium Suiphide (CdS) and Cadmium Selenide, (CdSe), which are generally considered to be the best materials for the making of photoresistors. However, Cadmium (Cd) is a poisonous element.
The traditional technique for making photoresistors entails spraying a photosensitive material mainly composed of Cadmium Sulphide (CdS) or Cadmium Selenide (CdSe) onto the surface of a ceramic base. Electrodes are then plated on top of this photosensitive layer. However, this method results in a significant exposed area of uncovered photosensitive material, which can be harmful to users and to the environment.
It is an object of the invention to seek to mitigate this disadvantage.
According to a first aspect, the invention provides a method of making a photoresistor, comprising the steps of providing a substrate, applying a photosensitive material to a portion of the substrate by masking to provide a deposit, and applying an electrode to the photosensitive material deposited in the desired pattern.
Using the invention, the overall level of photosensitive material can be reduced, and the material is substantially covered by the electrode(s). The substrate, or base, may be provided as a ceramic material.
The photosensitive material may comprise a cadmium compound, such as Cadmium Suiphide or Cadmium Selenide.
The step of applying the photosensitive material may comprise using a masking spray method, for example a precipitation spray, a sputtering spray, or a printing method.
These are all relatively simple, and efficient.
The method may comprise applying a tin electrode to the photosensitive material, or any other suitable material such as copper may be used.
According to a second aspect, the invention provides a photoresistor, comprising a substrate, a photosensitive material formed on a portion of the substrate in a desired pattern, and an electrode applied to the photosensitive material in the desired pattern, whereby the photosensitive material and electrode are substantially superimposed.
This provides for a reduction in the amount of photosensitive material which is utilised.
The photosensitive material may comprise Cadmium, e.g. Cadmium Sulphide or Cadmium Selenide.
The substrate may suitably comprise a ceramic, and the electrode may comprise a tin electrode, or a copper or other suitable material electrode.
A method and photoresistor are hereinafter described, by way of example, with reference to the accompanying drawings.
Fig. I is a schematic plan view of a surface a ceramic substrate or base; Fig. 2 is a schematic plan view of the surface of Fig. 1 to which a photosensitive material has been applied in a desired pattern; Fig. 3 is a schematic plan view of the surface of Gigs. 1 and 2 plated with an electrode or electrodes; and Fig. 4 is a side elevational view of overlapped layers of Figs. 2 and 3.
Referring to the drawings, a photoresistor 1 is made by providing a substrate or base 2 such as a ceramic material, and then providing a trace or desired pattern 3 of a photosensitive material such as one comprising Cadmium, for example Cadmium Suiphide or Cadmium Selenide. The material is laid down over a portion of the surface 4 of the ceramic substrate or base 2 by using a masked spray technique, for example in the embodiment by using precipitation, sputtering or printing. An electrode 6, which in the embodiment is of tin, is then provided in the same shape or pattern 7 as that of the photosensitive material and laid down on it by any suitable method for example plating, deposition or by direct physical application to the photosensitive material. Thus the electrode 6 and photosensitive material 3 are substantially superimposed, with the result that there is a reduced area of (poisonous) Cadmium exposed to users and the enviromnent. Thus the overall level of Cadmium in photo-resistive components produced using the method and photoresistor will be reduced as compared to prior methods.
It will be understood that the coated photosensitive layer and the corresponding shape 7 (geometry) of the electrode(s) can be varied to provide a desired pattern e.g. linear, curved or a combination thereof.
Using the invention described hereinbefore with reference to the drawings, it is possible to employ a masked spray to provide the layer of photosensitive material 3 in a desired pattern 7 on the surface 6 of the substrate or base 2, and that only a portion of the functional area of the surface 4 of the substrate or base 2 is coated with the photosensitive material 3, thereby reducing the amount of Cadmium used.
Claims (17)
- CLAIMS: 1. A method of making a photoresistor, comprising the steps ofproviding a substrate, applying a photosensitive material to a portion of the substrate by masking to provide a deposit, and applying an electrode to the photosensitive material deposited in the desired pattern.
- 2. A method according to Claim 1, the substrate being provided as a ceramic material.
- 3. A method according to Claim 1 or Claim 2, the photosensitive material comprising a Cadmium compound.
- 4. A method according to Claim 3, the compound comprising Cadmium Suiphide.
- 5. A method according to Claim 3, the compound comprising Cadmium Selenide.
- 6. A method according to any preceding claim, the step of applying the photosensitive material comprising using a masking spray method.
- 7. A method according to Claim 6, the masking spray method comprising a precipitation spray, a sputtering spray, or a printing method.
- 8. A method according to any preceding claim, comprising applying a tin electrode to the photosensitive material.
- 9. A method according to Claim 1, substantially as hereinbefore described.
- 10. A photoresistor, comprising a substrate, a photosensitive material formed on a portion of the substrate in a desired pattern, and an electrode applied to the photosensitive material in the desired pattern, whereby the photosensitive material and electrode are substantially superimposed.
- 11. A photosensitive material according to Claim 10, the photosensitive material comprising Cadmium.
- 12. A photosensitive material according to Claim 11, the material comprising Cadmium Sulphide.
- 13. A photoresistor according to Claim 11, the material comprising Cadmium Selenide.
- 14. A photoresistor according to any of Claims 10 to 13, the substrate comprising a ceramic.
- 15. A photoresistor according to Claim 14, the electrode comprising a tin electrode.
- 16. A photoresistor according to Claim 15, the electrode being applied by plating.
- 17. A photoresistor substantially as hereinbefore described with reference to the accompanying drawing.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0519746A GB2430797A (en) | 2005-09-28 | 2005-09-28 | A method of making a photoresistor |
| PCT/IB2006/003888 WO2008038064A1 (en) | 2005-09-28 | 2006-09-28 | A method of making a photoresistor and a photoresistor made thereby |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0519746A GB2430797A (en) | 2005-09-28 | 2005-09-28 | A method of making a photoresistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0519746D0 GB0519746D0 (en) | 2005-11-09 |
| GB2430797A true GB2430797A (en) | 2007-04-04 |
Family
ID=35394890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0519746A Withdrawn GB2430797A (en) | 2005-09-28 | 2005-09-28 | A method of making a photoresistor |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB2430797A (en) |
| WO (1) | WO2008038064A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1086603A (en) * | 1966-03-08 | 1967-10-11 | Gen Precision Inc | Photoconductive thin film cell responding to a broad spectral range of light input |
| JPS5769783A (en) * | 1980-10-20 | 1982-04-28 | Nippon Telegr & Teleph Corp <Ntt> | Formation of multilayer thin film pattern |
| US4701997A (en) * | 1985-08-08 | 1987-10-27 | Sharp Kabushiki Kaisha | Method of making photo-electric converting elements |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55158682A (en) * | 1979-05-29 | 1980-12-10 | Matsushita Electric Ind Co Ltd | Photoconductive cell and manufacture thereof |
| JPS59152677A (en) * | 1983-02-18 | 1984-08-31 | Matsushita Electric Ind Co Ltd | Cds photoconductive cell |
| JPH03266475A (en) * | 1990-03-15 | 1991-11-27 | Komatsu Ltd | Exposure sensor |
| JPH0426165A (en) * | 1990-05-22 | 1992-01-29 | Matsushita Electric Works Ltd | Cds photoconductive element device |
-
2005
- 2005-09-28 GB GB0519746A patent/GB2430797A/en not_active Withdrawn
-
2006
- 2006-09-28 WO PCT/IB2006/003888 patent/WO2008038064A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1086603A (en) * | 1966-03-08 | 1967-10-11 | Gen Precision Inc | Photoconductive thin film cell responding to a broad spectral range of light input |
| JPS5769783A (en) * | 1980-10-20 | 1982-04-28 | Nippon Telegr & Teleph Corp <Ntt> | Formation of multilayer thin film pattern |
| US4701997A (en) * | 1985-08-08 | 1987-10-27 | Sharp Kabushiki Kaisha | Method of making photo-electric converting elements |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0519746D0 (en) | 2005-11-09 |
| WO2008038064A1 (en) | 2008-04-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10070569B2 (en) | Method for manufacturing an electronic device | |
| KR101972176B1 (en) | Self-aligned coverage of opaque conductive areas | |
| DK0679052T3 (en) | Method for Structured Metallization of Substrate Surfaces | |
| WO2001039288A8 (en) | Method for patterning devices | |
| CA2376408A1 (en) | Abrasion resistant conductive film and gasket | |
| CN110366323B (en) | Manufacturing method of circuit board solder mask layer | |
| EP0878834A3 (en) | A method for preventing electroplanting of copper on an exposed surface at the edge exclusion of a semiconductor wafer | |
| WO2004054940A3 (en) | Metallic coated dielectric substrates comprising parylene polymer protective layer | |
| WO2007021544A3 (en) | Method for making a thin film layer | |
| JPH01321612A (en) | Method of providing laminated or capsulated metal conductors | |
| JP3618997B2 (en) | How to create a metal standoff on an electronic circuit | |
| CN106211611A (en) | Method and the conducting wire of continuous conduction circuit is set up on non-conductive substrate surface | |
| DE602006020367D1 (en) | Process for the preparation of bonded substrates and associated substrate | |
| WO2013184028A1 (en) | Method for producing conductive tracks | |
| WO2005022664A3 (en) | Production of electronic devices | |
| DE19643911A1 (en) | Opto-electronic integrated circuit arrangement | |
| DK1015130T3 (en) | Electroforming method for producing a blade blade | |
| WO2008157529A3 (en) | Method of manufacturing electrically conductive strips | |
| TW328167B (en) | Method for manufacturing lead frame | |
| GB2430797A (en) | A method of making a photoresistor | |
| WO2004038809A3 (en) | Formation of contacts on semiconductor substrates | |
| MY125902A (en) | Method for manufacturing resistors | |
| ES2294343T3 (en) | MULTI-PATH CIRCUIT ASSEMBLY AND PREPARATION PROCEDURE. | |
| WO2005008743A3 (en) | A semiconductor device with metallic electrodes and a method for use in forming such a device | |
| WO2004073098A3 (en) | Fabrication of parascan tunable dielectric chips |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |