JPS55158682A - Photoconductive cell and manufacture thereof - Google Patents

Photoconductive cell and manufacture thereof

Info

Publication number
JPS55158682A
JPS55158682A JP6714479A JP6714479A JPS55158682A JP S55158682 A JPS55158682 A JP S55158682A JP 6714479 A JP6714479 A JP 6714479A JP 6714479 A JP6714479 A JP 6714479A JP S55158682 A JPS55158682 A JP S55158682A
Authority
JP
Japan
Prior art keywords
electrodes
constitution
conductive
photoconductive
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6714479A
Other languages
Japanese (ja)
Other versions
JPS6311792B2 (en
Inventor
Akihiko Nakano
Nobuo Nakayama
Hitoshi Matsumoto
Seiji Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6714479A priority Critical patent/JPS55158682A/en
Publication of JPS55158682A publication Critical patent/JPS55158682A/en
Publication of JPS6311792B2 publication Critical patent/JPS6311792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To provide ohmic contact electrodes having strong contacting strength by using conductive Ag paint prepared by adding In in a III-V-group-compound semiconductor material. CONSTITUTION:A photoconductive CdS element 2 is provided on a ceramic substrate 1. A conductive Ag paint of 78wt% and In powder of 22wt% with a 325- mesh grain size are well blended and printed through a screen and heated. Electrodes 3 are formed on CdS 2, and covered by transparent resin 5. In this constitution, the same photoconductive characteristics as those of the cell having the electrodes evaporated by the conventional In-Sn method are obtained, the contacting strength is stronger than that of the conventional electrodes, and the deterioration in characteristics is less than the conventional cells.
JP6714479A 1979-05-29 1979-05-29 Photoconductive cell and manufacture thereof Granted JPS55158682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6714479A JPS55158682A (en) 1979-05-29 1979-05-29 Photoconductive cell and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6714479A JPS55158682A (en) 1979-05-29 1979-05-29 Photoconductive cell and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS55158682A true JPS55158682A (en) 1980-12-10
JPS6311792B2 JPS6311792B2 (en) 1988-03-16

Family

ID=13336412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6714479A Granted JPS55158682A (en) 1979-05-29 1979-05-29 Photoconductive cell and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS55158682A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57175224A (en) * 1981-03-30 1982-10-28 Secr Defence Brit Photoconductive detector
WO2008038064A1 (en) * 2005-09-28 2008-04-03 Macron International Group Ltd A method of making a photoresistor and a photoresistor made thereby

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57175224A (en) * 1981-03-30 1982-10-28 Secr Defence Brit Photoconductive detector
JPH059945B2 (en) * 1981-03-30 1993-02-08 Secr Defence Brit
WO2008038064A1 (en) * 2005-09-28 2008-04-03 Macron International Group Ltd A method of making a photoresistor and a photoresistor made thereby

Also Published As

Publication number Publication date
JPS6311792B2 (en) 1988-03-16

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