JPS57190366A - Manufacture of semiconductor pressure sensor - Google Patents

Manufacture of semiconductor pressure sensor

Info

Publication number
JPS57190366A
JPS57190366A JP7502881A JP7502881A JPS57190366A JP S57190366 A JPS57190366 A JP S57190366A JP 7502881 A JP7502881 A JP 7502881A JP 7502881 A JP7502881 A JP 7502881A JP S57190366 A JPS57190366 A JP S57190366A
Authority
JP
Japan
Prior art keywords
layer
type
formation
substrate
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7502881A
Other languages
Japanese (ja)
Inventor
Teruyuki Kagami
Ryosaku Kanzawa
Komei Yatsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7502881A priority Critical patent/JPS57190366A/en
Publication of JPS57190366A publication Critical patent/JPS57190366A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To simplify a manufacturing process of a pressure sensitive Si diaphragm by a method wherein the front and rear surfaces of an N type Si substrate is directly diffused with high B concentration for the formation of a first and second doped layers whereof the first is covered with an epitaxially grown N type Si layer and the second is to serve as an etching resist. CONSTITUTION:B is diffused into the front and rear surfaces of a disk shaped Si substrate 9 for the formation of a P type first doped layer 10 and a second doped layer 11 and the layer 10 is covered with an N type Si layer 12 grown epitaxially and then with a heat oxidated film 13. The central part is provided with an opening wherethrough ions are implanted for the provision in the exposed layer 12 of a P type region 14 to serve as a distortion gage. The heat oxidated fiom 15 on the rear side layer 11 is applied a photoresist film 16 and the rear side lamination is provided with an opening 18 for the formation of a diaphragm. The remaining film 16 is used as a mask in a process of etching away the substrate 9 for the exposure of the layer 10 in the front surface lamination for the production of a desired diaphragm 19.
JP7502881A 1981-05-20 1981-05-20 Manufacture of semiconductor pressure sensor Pending JPS57190366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7502881A JPS57190366A (en) 1981-05-20 1981-05-20 Manufacture of semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7502881A JPS57190366A (en) 1981-05-20 1981-05-20 Manufacture of semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPS57190366A true JPS57190366A (en) 1982-11-22

Family

ID=13564309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7502881A Pending JPS57190366A (en) 1981-05-20 1981-05-20 Manufacture of semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS57190366A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6080281A (en) * 1983-10-07 1985-05-08 Sumitomo Electric Ind Ltd Semiconductor pressure sensor and manufacture thereof
JPS60201665A (en) * 1984-03-26 1985-10-12 Nippon Denso Co Ltd Pressure-electricity converter
JPS60253279A (en) * 1984-05-29 1985-12-13 Toyota Central Res & Dev Lab Inc Measuring instrument for strain in semiconductor
JPH01151272A (en) * 1987-12-08 1989-06-14 Fuji Electric Co Ltd Manufacture of semiconductor pressure sensor
US5356829A (en) * 1990-11-09 1994-10-18 Robert Bosch Gmbh Silicon device including a pn-junction acting as an etch-stop in a silicon substrate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6080281A (en) * 1983-10-07 1985-05-08 Sumitomo Electric Ind Ltd Semiconductor pressure sensor and manufacture thereof
JPS60201665A (en) * 1984-03-26 1985-10-12 Nippon Denso Co Ltd Pressure-electricity converter
JPS60253279A (en) * 1984-05-29 1985-12-13 Toyota Central Res & Dev Lab Inc Measuring instrument for strain in semiconductor
JPH0337750B2 (en) * 1984-05-29 1991-06-06 Toyoda Chuo Kenkyusho Kk
JPH01151272A (en) * 1987-12-08 1989-06-14 Fuji Electric Co Ltd Manufacture of semiconductor pressure sensor
US5356829A (en) * 1990-11-09 1994-10-18 Robert Bosch Gmbh Silicon device including a pn-junction acting as an etch-stop in a silicon substrate

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