JPS57190366A - Manufacture of semiconductor pressure sensor - Google Patents
Manufacture of semiconductor pressure sensorInfo
- Publication number
- JPS57190366A JPS57190366A JP7502881A JP7502881A JPS57190366A JP S57190366 A JPS57190366 A JP S57190366A JP 7502881 A JP7502881 A JP 7502881A JP 7502881 A JP7502881 A JP 7502881A JP S57190366 A JPS57190366 A JP S57190366A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- formation
- substrate
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000003475 lamination Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To simplify a manufacturing process of a pressure sensitive Si diaphragm by a method wherein the front and rear surfaces of an N type Si substrate is directly diffused with high B concentration for the formation of a first and second doped layers whereof the first is covered with an epitaxially grown N type Si layer and the second is to serve as an etching resist. CONSTITUTION:B is diffused into the front and rear surfaces of a disk shaped Si substrate 9 for the formation of a P type first doped layer 10 and a second doped layer 11 and the layer 10 is covered with an N type Si layer 12 grown epitaxially and then with a heat oxidated film 13. The central part is provided with an opening wherethrough ions are implanted for the provision in the exposed layer 12 of a P type region 14 to serve as a distortion gage. The heat oxidated fiom 15 on the rear side layer 11 is applied a photoresist film 16 and the rear side lamination is provided with an opening 18 for the formation of a diaphragm. The remaining film 16 is used as a mask in a process of etching away the substrate 9 for the exposure of the layer 10 in the front surface lamination for the production of a desired diaphragm 19.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7502881A JPS57190366A (en) | 1981-05-20 | 1981-05-20 | Manufacture of semiconductor pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7502881A JPS57190366A (en) | 1981-05-20 | 1981-05-20 | Manufacture of semiconductor pressure sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57190366A true JPS57190366A (en) | 1982-11-22 |
Family
ID=13564309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7502881A Pending JPS57190366A (en) | 1981-05-20 | 1981-05-20 | Manufacture of semiconductor pressure sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57190366A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6080281A (en) * | 1983-10-07 | 1985-05-08 | Sumitomo Electric Ind Ltd | Semiconductor pressure sensor and manufacture thereof |
JPS60201665A (en) * | 1984-03-26 | 1985-10-12 | Nippon Denso Co Ltd | Pressure-electricity converter |
JPS60253279A (en) * | 1984-05-29 | 1985-12-13 | Toyota Central Res & Dev Lab Inc | Measuring instrument for strain in semiconductor |
JPH01151272A (en) * | 1987-12-08 | 1989-06-14 | Fuji Electric Co Ltd | Manufacture of semiconductor pressure sensor |
US5356829A (en) * | 1990-11-09 | 1994-10-18 | Robert Bosch Gmbh | Silicon device including a pn-junction acting as an etch-stop in a silicon substrate |
-
1981
- 1981-05-20 JP JP7502881A patent/JPS57190366A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6080281A (en) * | 1983-10-07 | 1985-05-08 | Sumitomo Electric Ind Ltd | Semiconductor pressure sensor and manufacture thereof |
JPS60201665A (en) * | 1984-03-26 | 1985-10-12 | Nippon Denso Co Ltd | Pressure-electricity converter |
JPS60253279A (en) * | 1984-05-29 | 1985-12-13 | Toyota Central Res & Dev Lab Inc | Measuring instrument for strain in semiconductor |
JPH0337750B2 (en) * | 1984-05-29 | 1991-06-06 | Toyoda Chuo Kenkyusho Kk | |
JPH01151272A (en) * | 1987-12-08 | 1989-06-14 | Fuji Electric Co Ltd | Manufacture of semiconductor pressure sensor |
US5356829A (en) * | 1990-11-09 | 1994-10-18 | Robert Bosch Gmbh | Silicon device including a pn-junction acting as an etch-stop in a silicon substrate |
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