JPS56164551A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56164551A
JPS56164551A JP6736380A JP6736380A JPS56164551A JP S56164551 A JPS56164551 A JP S56164551A JP 6736380 A JP6736380 A JP 6736380A JP 6736380 A JP6736380 A JP 6736380A JP S56164551 A JPS56164551 A JP S56164551A
Authority
JP
Japan
Prior art keywords
groove
oxide film
layer
poly
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6736380A
Other languages
Japanese (ja)
Inventor
Akira Tabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6736380A priority Critical patent/JPS56164551A/en
Publication of JPS56164551A publication Critical patent/JPS56164551A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To flatten the isolation region between elements and to attain high integration without birdbeak by providing a groove reaching a substrate at an epitaxial layer wherein the surface of poly crystal is selectively oxidized after shallowly filling poly crystal Si in the groove through an oxide film. CONSTITUTION:A mask consisting of an oxide film 3 and a nitride film 4 is formed on the surface of an Si substrate 1 consisting of a (100) plane providing a opposite conductive type epitaxial layer 2 and a V-shaped groove 5 reaching the substrate is formed at an isolation region between elements by anisotropic etching, for example. Next, after forming an oxide film 6 on the surface of the groove 5, a poly Si layer 7 is piled on the whole surface of the film 6 with about twice the depth of the groove 5 in thickness. Next, chemical polishing is applied to the surface of the poly Si to leave the layer 7 about half the depth of the groove in thickness in the groove 5. Then, after forming an oxide film 10 on the surface of the layer 7 by selective oxidization by consisting the films 3, 4 as masks, the films 4, 3 are removed by etching. In this way, a semiconductor device can be composed by flattening the isolation region between elements and also by eliminating a birdbeak section.
JP6736380A 1980-05-21 1980-05-21 Manufacture of semiconductor device Pending JPS56164551A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6736380A JPS56164551A (en) 1980-05-21 1980-05-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6736380A JPS56164551A (en) 1980-05-21 1980-05-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56164551A true JPS56164551A (en) 1981-12-17

Family

ID=13342846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6736380A Pending JPS56164551A (en) 1980-05-21 1980-05-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56164551A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312770A (en) * 1991-06-06 1994-05-17 Lsi Logic Corporation Techniques for forming isolation structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312770A (en) * 1991-06-06 1994-05-17 Lsi Logic Corporation Techniques for forming isolation structures

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