JPS5626443A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5626443A
JPS5626443A JP10170879A JP10170879A JPS5626443A JP S5626443 A JPS5626443 A JP S5626443A JP 10170879 A JP10170879 A JP 10170879A JP 10170879 A JP10170879 A JP 10170879A JP S5626443 A JPS5626443 A JP S5626443A
Authority
JP
Japan
Prior art keywords
poly
si3n4
masks
films
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10170879A
Other languages
Japanese (ja)
Inventor
Tsutomu Akashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10170879A priority Critical patent/JPS5626443A/en
Publication of JPS5626443A publication Critical patent/JPS5626443A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To obtain a fine element layer having a little intrusion to Si3N4 masks by providing Si3N4 masks on a monocrystalline Si through a poly Si layer wherein selective oxidation is made. CONSTITUTION:A poly Si film 5 is formed on a monocrystalline Si substrate 9 and Si3N4 masks 1 are applied to oxide. The poly Si 5 having small diffusion resistance of an oxide agent such as O2 or H2O or the like is provided. Therefore, the intrusion 7 of an oxide film to the lower part of the Si3N4 films 1 is controlled and field oxide films 8 similar to the opening pattern of the masks 1 will be obtained. The poly Si 5 successively protects the substrate 9 at the time of photo etching to the Si3N4 films 1. Next, an Si substrate surface isolated by the field oxide films 8 is finished by converting the poly Si into SiO2 by oxidation. In this composition, a fine pattern will be formed even by an element isolation method by selective oxidation.
JP10170879A 1979-08-09 1979-08-09 Manufacture of semiconductor device Pending JPS5626443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10170879A JPS5626443A (en) 1979-08-09 1979-08-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10170879A JPS5626443A (en) 1979-08-09 1979-08-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5626443A true JPS5626443A (en) 1981-03-14

Family

ID=14307799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10170879A Pending JPS5626443A (en) 1979-08-09 1979-08-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5626443A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892364A (en) * 1981-11-30 1983-06-01 東レ株式会社 Selective permeable hollow yarn membrane
JPS59222159A (en) * 1983-06-02 1984-12-13 東レ株式会社 Permselective hollow yarn membrane

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892364A (en) * 1981-11-30 1983-06-01 東レ株式会社 Selective permeable hollow yarn membrane
JPH0360530B2 (en) * 1981-11-30 1991-09-17 Toray Industries
JPS59222159A (en) * 1983-06-02 1984-12-13 東レ株式会社 Permselective hollow yarn membrane
JPH0525510B2 (en) * 1983-06-02 1993-04-13 Toray Industries

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