JPS5776866A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5776866A JPS5776866A JP55153135A JP15313580A JPS5776866A JP S5776866 A JPS5776866 A JP S5776866A JP 55153135 A JP55153135 A JP 55153135A JP 15313580 A JP15313580 A JP 15313580A JP S5776866 A JPS5776866 A JP S5776866A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- manufacture
- semiconductor device
- degeneration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent the degeneration of the surface of a silicon nitride film in the heat treatment at a high temperature of a semiconductor substrate by forming a SiO2 film on the surface of the silicon nitride film shaped onto the semiconductor substrate. CONSTITUTION:The SiO2 film 6 is formed on the surface of the Si3N4 film 3 selectively shaped onto the Si substrate 1 through a SiO2 layer 2 and oxidized, and plasma-etched. Accordingly, the degeneration of the surface of the Si3N4 film 3 resulting from the heat treatment at the high temperature can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55153135A JPS5776866A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55153135A JPS5776866A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5776866A true JPS5776866A (en) | 1982-05-14 |
Family
ID=15555759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55153135A Pending JPS5776866A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5776866A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5424253A (en) * | 1992-03-09 | 1995-06-13 | Oki Electric Industry Co., Ltd. | Method for manufacturing an inter-layer insulating film |
-
1980
- 1980-10-31 JP JP55153135A patent/JPS5776866A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5424253A (en) * | 1992-03-09 | 1995-06-13 | Oki Electric Industry Co., Ltd. | Method for manufacturing an inter-layer insulating film |
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