JPS55156327A - Manufacture for semiconductor - Google Patents

Manufacture for semiconductor

Info

Publication number
JPS55156327A
JPS55156327A JP6371379A JP6371379A JPS55156327A JP S55156327 A JPS55156327 A JP S55156327A JP 6371379 A JP6371379 A JP 6371379A JP 6371379 A JP6371379 A JP 6371379A JP S55156327 A JPS55156327 A JP S55156327A
Authority
JP
Japan
Prior art keywords
film
layer
substrate
mask
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6371379A
Other languages
Japanese (ja)
Other versions
JPS5811729B2 (en
Inventor
Takashi Ito
Takao Nozaki
Hajime Ishikawa
Masaichi Shinoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54063713A priority Critical patent/JPS5811729B2/en
Publication of JPS55156327A publication Critical patent/JPS55156327A/en
Publication of JPS5811729B2 publication Critical patent/JPS5811729B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent penetration of impurities securely while having a good adherence onto a substrate by a method wherein, after an SiO2 film is formed on a semiconductor substrate as an impurity diffused mask, the film is provided with heat treatment in an atmosphere containing an N2 gas to change its surface into a layer containing Si3N4, and the layer is used for the mask. CONSTITUTION:A semiconductor substrate 1 is provided with heat treatment in dry O2 to form an SiO2 film 2 on the surface, and then provided with heat treatment in an atmosphere of 100% NH4 to convert a surface layer of the film 2 only to an Si3N4 layer 3. A photoresist film 4 with an opening 4a is provided on this layer 3, and with this film as a mask the film 2 is provided with etching to have an opening 3a. Then, with the film 2 as a mask, an umpurity is diffused in the opening 3a on the substrate 1 to have a diffusion layer 6. It is possible to make the film thin without generating heat distortion on the substrate since the SiO2 film highly adhesive to the Si-substrate and the Si3N4 film of a fine and tight construction are made into a unitary body as described above. A fine diffusion is also possible without a horizontal diffusion.
JP54063713A 1979-05-23 1979-05-23 Manufacturing method of semiconductor device Expired JPS5811729B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54063713A JPS5811729B2 (en) 1979-05-23 1979-05-23 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54063713A JPS5811729B2 (en) 1979-05-23 1979-05-23 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55156327A true JPS55156327A (en) 1980-12-05
JPS5811729B2 JPS5811729B2 (en) 1983-03-04

Family

ID=13237291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54063713A Expired JPS5811729B2 (en) 1979-05-23 1979-05-23 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5811729B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147150A (en) * 1982-02-26 1983-09-01 Fujitsu Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50156359A (en) * 1974-06-05 1975-12-17
JPS52147992A (en) * 1976-06-02 1977-12-08 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50156359A (en) * 1974-06-05 1975-12-17
JPS52147992A (en) * 1976-06-02 1977-12-08 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147150A (en) * 1982-02-26 1983-09-01 Fujitsu Ltd Manufacture of semiconductor device
JPH0371771B2 (en) * 1982-02-26 1991-11-14 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS5811729B2 (en) 1983-03-04

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