JPS561540A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS561540A
JPS561540A JP7711379A JP7711379A JPS561540A JP S561540 A JPS561540 A JP S561540A JP 7711379 A JP7711379 A JP 7711379A JP 7711379 A JP7711379 A JP 7711379A JP S561540 A JPS561540 A JP S561540A
Authority
JP
Japan
Prior art keywords
film
mask
thickness
sio2
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7711379A
Other languages
Japanese (ja)
Inventor
Osamu Hataishi
Hideji Asukama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7711379A priority Critical patent/JPS561540A/en
Publication of JPS561540A publication Critical patent/JPS561540A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To prevent crystal defects, by making the thickness of the edge part of an Si3N4 film pattern larger and by reducing stress at the time of oxidation treatment. CONSTITUTION:An Si3N4 film 12 is provided on an Si substrate 11. An SiO2 film 13 is used as a mask to etch the former film 12 to reduce its thickness by half. The mask 13 is removed. An SiO2 mask 14 is produced. An opening is made in the Si3N4 film 12. The mask 14 is removed. At that time, the thickness of the edge part of the film 12 is larger than that of its other part. High-temperature treatment with humidification is then effected to produce an SiO2 film 15 with high accuracy on the exposed part of the substrate 11. Since the film 15 is not protruded, snapping is not caused. Since the thickness of the central part of the mask 12 is small, no crystal defects are caused and a selectively oxidized film of high reliability is manufactured. As a result, the degree of integration can be enhanced.
JP7711379A 1979-06-19 1979-06-19 Manufacture of semiconductor device Pending JPS561540A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7711379A JPS561540A (en) 1979-06-19 1979-06-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7711379A JPS561540A (en) 1979-06-19 1979-06-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS561540A true JPS561540A (en) 1981-01-09

Family

ID=13624723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7711379A Pending JPS561540A (en) 1979-06-19 1979-06-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS561540A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61117105U (en) * 1984-12-28 1986-07-24
JPS63155965U (en) * 1987-03-30 1988-10-13

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61117105U (en) * 1984-12-28 1986-07-24
JPH0213288Y2 (en) * 1984-12-28 1990-04-12
JPS63155965U (en) * 1987-03-30 1988-10-13

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