JPS5667927A - Thin film etching method of electronic parts - Google Patents

Thin film etching method of electronic parts

Info

Publication number
JPS5667927A
JPS5667927A JP14497179A JP14497179A JPS5667927A JP S5667927 A JPS5667927 A JP S5667927A JP 14497179 A JP14497179 A JP 14497179A JP 14497179 A JP14497179 A JP 14497179A JP S5667927 A JPS5667927 A JP S5667927A
Authority
JP
Japan
Prior art keywords
scribe line
layer
sio2
thin film
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14497179A
Other languages
Japanese (ja)
Inventor
Yoshitaka Yoshikawa
Hiroyuki Nishiue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14497179A priority Critical patent/JPS5667927A/en
Publication of JPS5667927A publication Critical patent/JPS5667927A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To form a stable line by a method wherein SiO2 of a scribe line part is removed by means of etching by using a metal formed on an SiO2 film on an Si substrate by means of a lift off method utilizing a positive type photoresist. CONSTITUTION:An SiO film 2 is formed on an Si substrate 1 and thereupon, a pattern of a positive photoresist 3 having a same pattern of a scribe line is formed and a Nichrome layer 4 is evaporated on the whole surface and thereafter, a Nichrome layer of the scribe line is removed by means of a lift off method. Making this Nichrome layer a mask, an SiO2 layer is processed through etching to form a scribe line. With this, in comparison with a scribe line formed by taking a photoresist layer as a mask, a stable scribe line wherein no influence of pin holes exists can be formed.
JP14497179A 1979-11-08 1979-11-08 Thin film etching method of electronic parts Pending JPS5667927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14497179A JPS5667927A (en) 1979-11-08 1979-11-08 Thin film etching method of electronic parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14497179A JPS5667927A (en) 1979-11-08 1979-11-08 Thin film etching method of electronic parts

Publications (1)

Publication Number Publication Date
JPS5667927A true JPS5667927A (en) 1981-06-08

Family

ID=15374448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14497179A Pending JPS5667927A (en) 1979-11-08 1979-11-08 Thin film etching method of electronic parts

Country Status (1)

Country Link
JP (1) JPS5667927A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002071433A2 (en) * 2000-11-14 2002-09-12 Plasmion Displays, Llc Method of fabricating capillary discharge plasma display panel using lift-off process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002071433A2 (en) * 2000-11-14 2002-09-12 Plasmion Displays, Llc Method of fabricating capillary discharge plasma display panel using lift-off process
WO2002071433A3 (en) * 2000-11-14 2004-04-08 Plasmion Displays Llc Method of fabricating capillary discharge plasma display panel using lift-off process

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