JPS5667927A - Thin film etching method of electronic parts - Google Patents
Thin film etching method of electronic partsInfo
- Publication number
- JPS5667927A JPS5667927A JP14497179A JP14497179A JPS5667927A JP S5667927 A JPS5667927 A JP S5667927A JP 14497179 A JP14497179 A JP 14497179A JP 14497179 A JP14497179 A JP 14497179A JP S5667927 A JPS5667927 A JP S5667927A
- Authority
- JP
- Japan
- Prior art keywords
- scribe line
- layer
- sio2
- thin film
- etching method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000005530 etching Methods 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 229910001120 nichrome Inorganic materials 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Weting (AREA)
Abstract
PURPOSE:To form a stable line by a method wherein SiO2 of a scribe line part is removed by means of etching by using a metal formed on an SiO2 film on an Si substrate by means of a lift off method utilizing a positive type photoresist. CONSTITUTION:An SiO film 2 is formed on an Si substrate 1 and thereupon, a pattern of a positive photoresist 3 having a same pattern of a scribe line is formed and a Nichrome layer 4 is evaporated on the whole surface and thereafter, a Nichrome layer of the scribe line is removed by means of a lift off method. Making this Nichrome layer a mask, an SiO2 layer is processed through etching to form a scribe line. With this, in comparison with a scribe line formed by taking a photoresist layer as a mask, a stable scribe line wherein no influence of pin holes exists can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14497179A JPS5667927A (en) | 1979-11-08 | 1979-11-08 | Thin film etching method of electronic parts |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14497179A JPS5667927A (en) | 1979-11-08 | 1979-11-08 | Thin film etching method of electronic parts |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5667927A true JPS5667927A (en) | 1981-06-08 |
Family
ID=15374448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14497179A Pending JPS5667927A (en) | 1979-11-08 | 1979-11-08 | Thin film etching method of electronic parts |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5667927A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002071433A2 (en) * | 2000-11-14 | 2002-09-12 | Plasmion Displays, Llc | Method of fabricating capillary discharge plasma display panel using lift-off process |
-
1979
- 1979-11-08 JP JP14497179A patent/JPS5667927A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002071433A2 (en) * | 2000-11-14 | 2002-09-12 | Plasmion Displays, Llc | Method of fabricating capillary discharge plasma display panel using lift-off process |
WO2002071433A3 (en) * | 2000-11-14 | 2004-04-08 | Plasmion Displays Llc | Method of fabricating capillary discharge plasma display panel using lift-off process |
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