JPS5681954A - Manufacture of semiconductor ic - Google Patents
Manufacture of semiconductor icInfo
- Publication number
- JPS5681954A JPS5681954A JP15949179A JP15949179A JPS5681954A JP S5681954 A JPS5681954 A JP S5681954A JP 15949179 A JP15949179 A JP 15949179A JP 15949179 A JP15949179 A JP 15949179A JP S5681954 A JPS5681954 A JP S5681954A
- Authority
- JP
- Japan
- Prior art keywords
- films
- wiring
- etching
- pattern
- inverted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a highly precise and reliable wiring for the subject semiconductor IC by a method wherein a metal silicide is evaporated and lifted off using the mask having an inverted tapering section. CONSTITUTION:An aparture is provided on the SiO2 8 and Si3N4 9 on an elementformed subdtrate, and a PSG11 and CVD-SiO2 12 films are laminated. When the films 11 and 12 are etched by providing a resist mask 13, an inverted tapered type pattern 14 is selectively formed utilizing the difference of etching speed. The resist mask is removed and an MoSi2 151 and 152 films are deposited. After that, when the pattern 14 is removed by etching using NH4F, electrodes 16-18 are completed. As the metal silicide having an excellent etchingproof and heatproof property is used for the electrode material, there exists no partial removal and change in quality of the electrode wiring when the inverted tapering pattern 14 is removed by etching, and the rising of the wiring caused by heat treatment is prevented and a highly precise and reliable wiring can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15949179A JPS5681954A (en) | 1979-12-08 | 1979-12-08 | Manufacture of semiconductor ic |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15949179A JPS5681954A (en) | 1979-12-08 | 1979-12-08 | Manufacture of semiconductor ic |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5681954A true JPS5681954A (en) | 1981-07-04 |
Family
ID=15694919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15949179A Pending JPS5681954A (en) | 1979-12-08 | 1979-12-08 | Manufacture of semiconductor ic |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5681954A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008016061A1 (en) | 2006-08-02 | 2008-02-07 | Asahi Glass Co., Ltd. | Electronic circuit device and method for fabricating the same |
US7790358B2 (en) | 2003-11-11 | 2010-09-07 | Asahi Glass Company, Limited | Pattern formation method, electronic circuit manufactured by the same, and electronic device using the same |
-
1979
- 1979-12-08 JP JP15949179A patent/JPS5681954A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7790358B2 (en) | 2003-11-11 | 2010-09-07 | Asahi Glass Company, Limited | Pattern formation method, electronic circuit manufactured by the same, and electronic device using the same |
WO2008016061A1 (en) | 2006-08-02 | 2008-02-07 | Asahi Glass Co., Ltd. | Electronic circuit device and method for fabricating the same |
US8418359B2 (en) | 2006-08-02 | 2013-04-16 | Asahi Glass Company, Limited | Method for manufacturing circuit pattern-provided substrate |
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