JPS56150829A - Manufacture of aperture iris - Google Patents

Manufacture of aperture iris

Info

Publication number
JPS56150829A
JPS56150829A JP4187781A JP4187781A JPS56150829A JP S56150829 A JPS56150829 A JP S56150829A JP 4187781 A JP4187781 A JP 4187781A JP 4187781 A JP4187781 A JP 4187781A JP S56150829 A JPS56150829 A JP S56150829A
Authority
JP
Japan
Prior art keywords
layer
wafer
aperture
measurements
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4187781A
Other languages
Japanese (ja)
Other versions
JPS5827655B2 (en
Inventor
Kanji Wada
Toshiaki Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4187781A priority Critical patent/JPS5827655B2/en
Publication of JPS56150829A publication Critical patent/JPS56150829A/en
Publication of JPS5827655B2 publication Critical patent/JPS5827655B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

PURPOSE:To enable to easily manufacture the aperture iris having an excellent accuracy in measurements by a method wherein aperture measurements are established by performing an anisotropic etching on a single crystal substrate. CONSTITUTION:An SiO2 layer 2 is formed on both sides of a single crystal Si wafer 1 and on this layer 2, the resist pattern 3 having a desired shape and measurements are formed. Then, an anisotropic etching is performed on the wafer 1 using the pattern 3 as a mask. A protruding section 4, having a highly precise measurements, is formed into a trapezoidal shape by performing said etching. Then, a metal layer 5 is selectively formed on the surface of the wafer 1 under the condition that the protruding section 4 and the reverse side of the wafer 1 are covered. Then, an aperture material 6 is formed. After the wafer 1 and the layer 2 have been removed, an etching is performed on the material 6 from the back side using the layer 5 as a mask. By performing an etching removal on the layer 5, the aperture iris, having the desired sectional shape and measurements of an aperture 7, can be obtained.
JP4187781A 1981-03-23 1981-03-23 Manufacturing method of aperture diaphragm Expired JPS5827655B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4187781A JPS5827655B2 (en) 1981-03-23 1981-03-23 Manufacturing method of aperture diaphragm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4187781A JPS5827655B2 (en) 1981-03-23 1981-03-23 Manufacturing method of aperture diaphragm

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13648378A Division JPS5562732A (en) 1978-11-06 1978-11-06 Preparation of aperture stop

Publications (2)

Publication Number Publication Date
JPS56150829A true JPS56150829A (en) 1981-11-21
JPS5827655B2 JPS5827655B2 (en) 1983-06-10

Family

ID=12620494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4187781A Expired JPS5827655B2 (en) 1981-03-23 1981-03-23 Manufacturing method of aperture diaphragm

Country Status (1)

Country Link
JP (1) JPS5827655B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724770A (en) * 1993-07-13 1995-01-27 Shinano Electron:Kk Suction sandwiching mechanism and temperature test device using it

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH074655A (en) * 1992-06-30 1995-01-10 Takeuchi Akira Battery-operated lighter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724770A (en) * 1993-07-13 1995-01-27 Shinano Electron:Kk Suction sandwiching mechanism and temperature test device using it

Also Published As

Publication number Publication date
JPS5827655B2 (en) 1983-06-10

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