JPS5651841A - Forming method for metal film pattern - Google Patents

Forming method for metal film pattern

Info

Publication number
JPS5651841A
JPS5651841A JP12778679A JP12778679A JPS5651841A JP S5651841 A JPS5651841 A JP S5651841A JP 12778679 A JP12778679 A JP 12778679A JP 12778679 A JP12778679 A JP 12778679A JP S5651841 A JPS5651841 A JP S5651841A
Authority
JP
Japan
Prior art keywords
film
steps
portions
metal film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12778679A
Other languages
Japanese (ja)
Inventor
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12778679A priority Critical patent/JPS5651841A/en
Publication of JPS5651841A publication Critical patent/JPS5651841A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To permit metal film patterns having extremely narrow pattern intervals to be formed by using steep steps formed on a substrate to selectively remove the metal film portions near the steps at narrow widths. CONSTITUTION:An Si substrate 1 is coated with an SiO2 film 2, in which contact holes 3 are made. Then, by using a resist film 4, steep steps 5 are formed on the film 2 in the pattern-separating regions. After the film 4 is removed, the whole surface is coated with a metal film, e.g., Al film 6. On doing this, Al film portions 6a near the steps 5 become ones each having a fairly lower density and worse state in film quality than those on the other regions, and therefore the etching speed of the portions 6a is several to several tens of times faster than the Al film portions on the other regions. After that, the whole surface of the film 6 is etched to remove all the Al film portions 6a near the steps 5. Thus, Al wirings 7 connected to the substrate 1 through the holes are formed.
JP12778679A 1979-10-03 1979-10-03 Forming method for metal film pattern Pending JPS5651841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12778679A JPS5651841A (en) 1979-10-03 1979-10-03 Forming method for metal film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12778679A JPS5651841A (en) 1979-10-03 1979-10-03 Forming method for metal film pattern

Publications (1)

Publication Number Publication Date
JPS5651841A true JPS5651841A (en) 1981-05-09

Family

ID=14968639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12778679A Pending JPS5651841A (en) 1979-10-03 1979-10-03 Forming method for metal film pattern

Country Status (1)

Country Link
JP (1) JPS5651841A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133927A (en) * 1983-12-21 1985-07-17 Kawasaki Steel Corp Control method of breakdown mill

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133927A (en) * 1983-12-21 1985-07-17 Kawasaki Steel Corp Control method of breakdown mill

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