JPS5513982A - Producing method of microscopic pattern - Google Patents

Producing method of microscopic pattern

Info

Publication number
JPS5513982A
JPS5513982A JP8757278A JP8757278A JPS5513982A JP S5513982 A JPS5513982 A JP S5513982A JP 8757278 A JP8757278 A JP 8757278A JP 8757278 A JP8757278 A JP 8757278A JP S5513982 A JPS5513982 A JP S5513982A
Authority
JP
Japan
Prior art keywords
pattern
etching
area
photoresist
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8757278A
Other languages
Japanese (ja)
Inventor
Akira Katsura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8757278A priority Critical patent/JPS5513982A/en
Publication of JPS5513982A publication Critical patent/JPS5513982A/en
Pending legal-status Critical Current

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  • Weting (AREA)

Abstract

PURPOSE: To nullify the effect of etching speed variation by forming in advance a photoresist pattern on the area to be frequently etched before the vapor-staying of metal film.
CONSTITUTION: After an impurity area 3 is formed on a semiconductor base plate 1, a photoresist pattern 9 is formed in the area to be applied with frequent etching of vapor-stayed metal film. Next, a photoresist is applied on the surface, a disired pattern is applied to be etched with etcing liquid. Etching is completed when the etching of a microscopic pattern area 5 is finished, resist patterns 9, 10 being removed. Thus, a microscopic pattern can be formed with good reproducing condition. Also, regarding an enlarged pattern area, a desired pattern can be obtained by the separation during the process of photoresist removal, though much snow 7 may be generated at the end of etching period.
COPYRIGHT: (C)1980,JPO&Japio
JP8757278A 1978-07-17 1978-07-17 Producing method of microscopic pattern Pending JPS5513982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8757278A JPS5513982A (en) 1978-07-17 1978-07-17 Producing method of microscopic pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8757278A JPS5513982A (en) 1978-07-17 1978-07-17 Producing method of microscopic pattern

Publications (1)

Publication Number Publication Date
JPS5513982A true JPS5513982A (en) 1980-01-31

Family

ID=13918704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8757278A Pending JPS5513982A (en) 1978-07-17 1978-07-17 Producing method of microscopic pattern

Country Status (1)

Country Link
JP (1) JPS5513982A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115245A (en) * 1982-12-07 1984-07-03 東洋製罐株式会社 Vessel
JPS59138534U (en) * 1983-03-04 1984-09-17 大日本印刷株式会社 Can body with hanging equipment
JPS62179914U (en) * 1986-05-06 1987-11-14

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115245A (en) * 1982-12-07 1984-07-03 東洋製罐株式会社 Vessel
JPS59138534U (en) * 1983-03-04 1984-09-17 大日本印刷株式会社 Can body with hanging equipment
JPS62179914U (en) * 1986-05-06 1987-11-14

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