JPS6410230A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS6410230A
JPS6410230A JP16579687A JP16579687A JPS6410230A JP S6410230 A JPS6410230 A JP S6410230A JP 16579687 A JP16579687 A JP 16579687A JP 16579687 A JP16579687 A JP 16579687A JP S6410230 A JPS6410230 A JP S6410230A
Authority
JP
Japan
Prior art keywords
resist film
layer resist
lower layer
patterning
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16579687A
Other languages
Japanese (ja)
Inventor
Hitoshi Miyazawa
Shuzo Oshio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16579687A priority Critical patent/JPS6410230A/en
Publication of JPS6410230A publication Critical patent/JPS6410230A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To remove completely the upper layer resist film before patterning a layer to be etched, by dividing the step for patterning the lower layer resist film into two portions, and interposing a step for removing completely the upper layer resist film between the divided patterning steps. CONSTITUTION:The upper part of the lower layer resist film 32 is patterned using the upper layer resist film 31 as a mask, and then, the upper layer resist film 31 is removed, followed by patterning the rear part of the lower layer resist film 32 using the upper part of the lower layer resist film 32 which is patterned on the upper part of said film 32, as a mask. Finally, the patterned lower layer resist film 32 is used for the mask. Thus, as the upper layer resist film 31 is removed completely before etching the material to be etched, any inconvenience does not generates in following steps.
JP16579687A 1987-07-02 1987-07-02 Pattern forming method Pending JPS6410230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16579687A JPS6410230A (en) 1987-07-02 1987-07-02 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16579687A JPS6410230A (en) 1987-07-02 1987-07-02 Pattern forming method

Publications (1)

Publication Number Publication Date
JPS6410230A true JPS6410230A (en) 1989-01-13

Family

ID=15819157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16579687A Pending JPS6410230A (en) 1987-07-02 1987-07-02 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS6410230A (en)

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