JPS5759331A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5759331A JPS5759331A JP13380580A JP13380580A JPS5759331A JP S5759331 A JPS5759331 A JP S5759331A JP 13380580 A JP13380580 A JP 13380580A JP 13380580 A JP13380580 A JP 13380580A JP S5759331 A JPS5759331 A JP S5759331A
- Authority
- JP
- Japan
- Prior art keywords
- film
- stepped section
- stepped
- psg
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
PURPOSE:To increase the reliability for the subject semiconductor device by a method wherein a resist film is applied on the stepped section on a substrate and the side of the stepped section is formed in tapered shape by repeatedly performing an incineration of oxygen-plasma and CF4 gas-etching alternately. CONSTITUTION:When a phosphor-silicate glass (PSG) film 3 is formed on the Al wiring layer 2 on a substrate 1, the side of the stepped section is turned to a sharp stepped form. On this stepped part, a resist film 4 is coated, the surface of the resist film 4 is incinerated and removed by performing an oxygen-plasma etching, and the PSG film 3 located at the corner part of the upper end of the stepped section is exposed. Then, an etching is performed on the PSG film which was exposed by a gas-plasma etching. Another PSG film is grown on the PSG film 3 and a tapered shape is formed. An al wiring layer 5 is coated on the above. Accordingly, the stepped section is formed into a tapered shape easily and the reliability of the semiconductor device can be increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13380580A JPS5759331A (en) | 1980-09-26 | 1980-09-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13380580A JPS5759331A (en) | 1980-09-26 | 1980-09-26 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5759331A true JPS5759331A (en) | 1982-04-09 |
Family
ID=15113440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13380580A Pending JPS5759331A (en) | 1980-09-26 | 1980-09-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5759331A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59123234A (en) * | 1982-12-28 | 1984-07-17 | Tohoku Metal Ind Ltd | Microscopic processing method |
US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
-
1980
- 1980-09-26 JP JP13380580A patent/JPS5759331A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59123234A (en) * | 1982-12-28 | 1984-07-17 | Tohoku Metal Ind Ltd | Microscopic processing method |
JPH0479130B2 (en) * | 1982-12-28 | 1992-12-15 | Tokin Corp | |
US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
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