JPS6479743A - Pattern forming method by dry developing - Google Patents

Pattern forming method by dry developing

Info

Publication number
JPS6479743A
JPS6479743A JP23634387A JP23634387A JPS6479743A JP S6479743 A JPS6479743 A JP S6479743A JP 23634387 A JP23634387 A JP 23634387A JP 23634387 A JP23634387 A JP 23634387A JP S6479743 A JPS6479743 A JP S6479743A
Authority
JP
Japan
Prior art keywords
layer
resist film
pattern
dry
silylated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23634387A
Other languages
Japanese (ja)
Inventor
Isamu Odaka
Yoshiaki Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP23634387A priority Critical patent/JPS6479743A/en
Publication of JPS6479743A publication Critical patent/JPS6479743A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a pattern with high accuracy by forming an absorption layer with increased absorbance, on a resist film positioned on a selectively exposed part, and forming a silylated layer with an increased silicon content on said absorption layer, followed by dry-etching the obtd. layer. CONSTITUTION:The absorption layer 7 which has a prescribed pattern and the increased absorbance is formed on the resist film 4 by applying an upper layer resist film 4 composed of an org. polymer on a substrate 3, followed by exposing selectively the upper layer resist film with an electron beam or a far infra-red radiation, etc. Next, the silylated layer 8 with the increased silicon content is formed on the absorption layer part 7 by subjecting said layer to silylation with the far infra-red radiation while bringing into contact said layer with a halogenated alkylsilane solution. And then, the obtd. silylated layer is dry-etched with a dry-etching gas to form the pattern. Thus, the pattern with the high accuracy can be formed.
JP23634387A 1987-09-22 1987-09-22 Pattern forming method by dry developing Pending JPS6479743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23634387A JPS6479743A (en) 1987-09-22 1987-09-22 Pattern forming method by dry developing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23634387A JPS6479743A (en) 1987-09-22 1987-09-22 Pattern forming method by dry developing

Publications (1)

Publication Number Publication Date
JPS6479743A true JPS6479743A (en) 1989-03-24

Family

ID=16999405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23634387A Pending JPS6479743A (en) 1987-09-22 1987-09-22 Pattern forming method by dry developing

Country Status (1)

Country Link
JP (1) JPS6479743A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126036A (en) * 1989-10-11 1991-05-29 Oki Electric Ind Co Ltd Intermediate layer forming material for three-layer resist method
JP2008233552A (en) * 2007-03-20 2008-10-02 Sony Corp Pattern formation substrate, pattern forming method, and metal mold

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61107346A (en) * 1984-10-26 1986-05-26 ユセベ　エレクトロニックス，ソシエテ　アノニム Formation of negative graphic in photoresist and integrated semiconductor circuit thereby
JPS61219034A (en) * 1985-03-19 1986-09-29 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Plasma resistant polymer material and making thereof
JPS6225424A (en) * 1985-07-26 1987-02-03 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JPS62165650A (en) * 1986-01-14 1987-07-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Manufacture of positive photoresist

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61107346A (en) * 1984-10-26 1986-05-26 ユセベ　エレクトロニックス，ソシエテ　アノニム Formation of negative graphic in photoresist and integrated semiconductor circuit thereby
JPS61219034A (en) * 1985-03-19 1986-09-29 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Plasma resistant polymer material and making thereof
JPS6225424A (en) * 1985-07-26 1987-02-03 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JPS62165650A (en) * 1986-01-14 1987-07-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Manufacture of positive photoresist

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126036A (en) * 1989-10-11 1991-05-29 Oki Electric Ind Co Ltd Intermediate layer forming material for three-layer resist method
JP2008233552A (en) * 2007-03-20 2008-10-02 Sony Corp Pattern formation substrate, pattern forming method, and metal mold
US8545969B2 (en) 2007-03-20 2013-10-01 Sony Corporation Pattern-formed substrate, pattern-forming method, and die

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