JPS56144536A - Pattern formation and p-n junction formation - Google Patents

Pattern formation and p-n junction formation

Info

Publication number
JPS56144536A
JPS56144536A JP4617280A JP4617280A JPS56144536A JP S56144536 A JPS56144536 A JP S56144536A JP 4617280 A JP4617280 A JP 4617280A JP 4617280 A JP4617280 A JP 4617280A JP S56144536 A JPS56144536 A JP S56144536A
Authority
JP
Japan
Prior art keywords
film
pattern
negative
junction
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4617280A
Other languages
Japanese (ja)
Inventor
Sakae Zenbutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4617280A priority Critical patent/JPS56144536A/en
Publication of JPS56144536A publication Critical patent/JPS56144536A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a P-N junction with good accuracy by irradiating light or the like or by injection H ion in a part of inorganic resist films wherein a fine negative or positive pattern is formed and the negative pattern is used as a diffusion source. CONSTITUTION:Inorganic resist films 2, 5 consisting of amorphous Si of tetrahedral group, C or SixC1-x (0<x<1) are formed on an Si substrate 1 by sputtering or the like. The resist film 2 is made to include H and radiant rays such as light or the like are irradiated at a region 3, a part of the film 2, to separate the H in the film 2 and a negative pattern 3 is then composed by etching the region 3 by an alkaline solution. The film 5 is made to exclude H and after injecting H ion in a region 6, a part of the film 5, a positive pattern 5 is made by etching process. These patterns can finely be formed as pin holes or the like will not be produced even if these patterns are made thin. Furthermore, a P-N junction can be formed with good accuracy on the substrate 1 by adding impurities in the negative resist film and by using the negative pattern as a diffusion source.
JP4617280A 1980-04-10 1980-04-10 Pattern formation and p-n junction formation Pending JPS56144536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4617280A JPS56144536A (en) 1980-04-10 1980-04-10 Pattern formation and p-n junction formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4617280A JPS56144536A (en) 1980-04-10 1980-04-10 Pattern formation and p-n junction formation

Publications (1)

Publication Number Publication Date
JPS56144536A true JPS56144536A (en) 1981-11-10

Family

ID=12739600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4617280A Pending JPS56144536A (en) 1980-04-10 1980-04-10 Pattern formation and p-n junction formation

Country Status (1)

Country Link
JP (1) JPS56144536A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006129565A1 (en) * 2005-05-30 2006-12-07 Pioneer Corporation Resist material, and resist material for electron beam recording
JP2008116990A (en) * 2005-05-30 2008-05-22 Pioneer Electronic Corp Resist material, and resist material for electron beam recording
JP2008134653A (en) * 2005-05-30 2008-06-12 Pioneer Electronic Corp Resist material, and resist material for electron beam recording

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006129565A1 (en) * 2005-05-30 2006-12-07 Pioneer Corporation Resist material, and resist material for electron beam recording
JP2008116990A (en) * 2005-05-30 2008-05-22 Pioneer Electronic Corp Resist material, and resist material for electron beam recording
JP2008134653A (en) * 2005-05-30 2008-06-12 Pioneer Electronic Corp Resist material, and resist material for electron beam recording
JPWO2006129565A1 (en) * 2005-05-30 2009-01-08 パイオニア株式会社 Resist material and electron beam recording resist material
US7713678B2 (en) 2005-05-30 2010-05-11 Pioneer Corporation Resist material and electron beam recording resist material
JP4696113B2 (en) * 2005-05-30 2011-06-08 パイオニア株式会社 Resist material and electron beam recording resist material
JP4696132B2 (en) * 2005-05-30 2011-06-08 パイオニア株式会社 Resist material and electron beam recording resist material
JP4696134B2 (en) * 2005-05-30 2011-06-08 パイオニア株式会社 Resist material and electron beam recording resist material

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