JPS57112025A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS57112025A
JPS57112025A JP18790880A JP18790880A JPS57112025A JP S57112025 A JPS57112025 A JP S57112025A JP 18790880 A JP18790880 A JP 18790880A JP 18790880 A JP18790880 A JP 18790880A JP S57112025 A JPS57112025 A JP S57112025A
Authority
JP
Japan
Prior art keywords
film
pattern
thin
covered
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18790880A
Other languages
Japanese (ja)
Other versions
JPS6410062B2 (en
Inventor
Hisao Haruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18790880A priority Critical patent/JPS57112025A/en
Publication of JPS57112025A publication Critical patent/JPS57112025A/en
Publication of JPS6410062B2 publication Critical patent/JPS6410062B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a fine, correct pattern by a method wherein an electron beam is employed for the exposure to light of a resist, the dry etching method is used to etch opaque masking substance such as Cr, and a thin In2O3 film is interposed between the resist film and the Cr film. CONSTITUTION:A transparent heat resisting plate 1 exemplifiedly made of glass is covered by a thin, opaque masking film 2 exemplifiedly of Cr. The thin film 2 is covered by a thin film 3 of In2O3, and then is covered totally by a resist film 4 which is to be selectively exposed to an electron beam. A pattern with openings 5 is realized after development. The pattern working as mask, the exposed part of the film 3 is removed by a parallel plate type plasma etching device using a substance belonging to the alcoholic family, O2, and N2. After this, plasma etching is effected using CCl4 and air to remove the exposed part of the film 2 in the openings 5. This results in a fine pattern on the substrate 1.
JP18790880A 1980-12-29 1980-12-29 Formation of pattern Granted JPS57112025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18790880A JPS57112025A (en) 1980-12-29 1980-12-29 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18790880A JPS57112025A (en) 1980-12-29 1980-12-29 Formation of pattern

Publications (2)

Publication Number Publication Date
JPS57112025A true JPS57112025A (en) 1982-07-12
JPS6410062B2 JPS6410062B2 (en) 1989-02-21

Family

ID=16214303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18790880A Granted JPS57112025A (en) 1980-12-29 1980-12-29 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS57112025A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987006027A2 (en) * 1986-04-01 1987-10-08 Plessey Overseas Limited An etch technique for metal mask definition
JPS63166231A (en) * 1986-12-27 1988-07-09 Hoya Corp Manufacture of photo mask

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987006027A2 (en) * 1986-04-01 1987-10-08 Plessey Overseas Limited An etch technique for metal mask definition
WO1987006027A3 (en) * 1986-04-01 1987-12-30 Plessey Overseas An etch technique for metal mask definition
JPS63166231A (en) * 1986-12-27 1988-07-09 Hoya Corp Manufacture of photo mask

Also Published As

Publication number Publication date
JPS6410062B2 (en) 1989-02-21

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