JPS576848A - Photomask and its preparation - Google Patents
Photomask and its preparationInfo
- Publication number
- JPS576848A JPS576848A JP8059780A JP8059780A JPS576848A JP S576848 A JPS576848 A JP S576848A JP 8059780 A JP8059780 A JP 8059780A JP 8059780 A JP8059780 A JP 8059780A JP S576848 A JPS576848 A JP S576848A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist pattern
- polycrystalline silicon
- pattern
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To reduce diffracted light at the end of a light shielded part and slantly incident light and to obtain a photomask capable of forming micropatterns faithful to the mask, by providing a transparent end part like a convex lens in the vicinity of the light shielding part. CONSTITUTION:A polycrystalline silicon film 12, a silicon dioxide film 13, an antioxidative insulating film, such as a silicon nitride film 14, are formed on a quartz glass substrate 11. A given resist pattern 15' is formed on the film 14 by the electron beam lithography, the film 14 is etched using this resist pattern 15' to form a given pattern 14', and after the film 13 of the other part has been disclosed, the resist pattern 15' is removed. Then, a polycrystalline silicon film 12 corresponding to said disclosed part is converted into a silicon dioxide film 16 having a transparent end part like a convex lens by treating the film 12 with high temperature steam using the pattern 14' as a mask, thus permitting a photomask 17 having the remaining polycrystalline silicon film 12 as a light shielding part to be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8059780A JPS576848A (en) | 1980-06-13 | 1980-06-13 | Photomask and its preparation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8059780A JPS576848A (en) | 1980-06-13 | 1980-06-13 | Photomask and its preparation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS576848A true JPS576848A (en) | 1982-01-13 |
JPS6223861B2 JPS6223861B2 (en) | 1987-05-26 |
Family
ID=13722732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8059780A Granted JPS576848A (en) | 1980-06-13 | 1980-06-13 | Photomask and its preparation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS576848A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58173744A (en) * | 1982-04-05 | 1983-10-12 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Mask |
JPS5979254A (en) * | 1982-09-27 | 1984-05-08 | ウエスターン エレクトリック カムパニー,インコーポレーテツド | Photomask |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56168654A (en) * | 1980-05-30 | 1981-12-24 | Fujitsu Ltd | Photomask |
-
1980
- 1980-06-13 JP JP8059780A patent/JPS576848A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56168654A (en) * | 1980-05-30 | 1981-12-24 | Fujitsu Ltd | Photomask |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58173744A (en) * | 1982-04-05 | 1983-10-12 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Mask |
JPS6259296B2 (en) * | 1982-04-05 | 1987-12-10 | Intaanashonaru Bijinesu Mashiinzu Corp | |
JPS5979254A (en) * | 1982-09-27 | 1984-05-08 | ウエスターン エレクトリック カムパニー,インコーポレーテツド | Photomask |
Also Published As
Publication number | Publication date |
---|---|
JPS6223861B2 (en) | 1987-05-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52109875A (en) | Position matching system for mask and wafer and its unit | |
JPS57211732A (en) | X ray exposing mask and manufacture thereof | |
JPS5630129A (en) | Manufacture of photomask | |
JPS576848A (en) | Photomask and its preparation | |
JPS576849A (en) | Photomask and its preparation | |
JPS5789221A (en) | Multiple mask | |
JPS5545019A (en) | Production of photo mask | |
JPS53110379A (en) | Optical filter and its manufacture | |
JPS6421450A (en) | Production of mask | |
JPS5339060A (en) | Lot number marking method to wafers | |
JPS5596952A (en) | Production of photomask | |
JPS5555528A (en) | Mask aligner | |
JPS56140345A (en) | Formation of pattern | |
JPS56144536A (en) | Pattern formation and p-n junction formation | |
JPS5581382A (en) | Production of optical reading hologram | |
JPS55163539A (en) | Photo mask | |
JPS57212445A (en) | Production of photomask | |
JPS5454579A (en) | Exposure method | |
JPS5360177A (en) | Photo mask | |
JPS56110232A (en) | Pattern formation with soft x-ray | |
JPS57112025A (en) | Formation of pattern | |
JPS55158635A (en) | Mask | |
JPS57212446A (en) | Photomask for far ultraviolet exposure | |
JPS6472163A (en) | Formation of thin film pattern | |
JPS57212447A (en) | Photomask |