JPS57212447A - Photomask - Google Patents

Photomask

Info

Publication number
JPS57212447A
JPS57212447A JP9797881A JP9797881A JPS57212447A JP S57212447 A JPS57212447 A JP S57212447A JP 9797881 A JP9797881 A JP 9797881A JP 9797881 A JP9797881 A JP 9797881A JP S57212447 A JPS57212447 A JP S57212447A
Authority
JP
Japan
Prior art keywords
photomask
electron beam
thin film
ion crystal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9797881A
Other languages
Japanese (ja)
Inventor
Koichi Mitsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP9797881A priority Critical patent/JPS57212447A/en
Publication of JPS57212447A publication Critical patent/JPS57212447A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To obtain a photomask having a pattern faithful to the designed value to be used for production of a semicondutor device, by irradiating the electron beam to an ion crystal thin film to turn it into a light shielding matter. CONSTITUTION:For a photomask used for production of a semiconductor device, an ion crystal thin film 2 of NaCl, etc. is coated on a transparent glass substrate 1. Then the exposure of electron beam is carried out with a desired from to a mask substrate containing a transparent conductive thin film 3 so as to prevent the electric charging of the film 2 functioning as an insulator. Thus a pattern 5 of the ion crystal is formed. As a result, an error of conversion from a resist image into a light shielding film image that is caused to a conventional photomask and the back scattering of the electron beam can be completely eliminated. Thus a photomask containing a pattern faithful to the designed value can be obtained.
JP9797881A 1981-06-23 1981-06-23 Photomask Pending JPS57212447A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9797881A JPS57212447A (en) 1981-06-23 1981-06-23 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9797881A JPS57212447A (en) 1981-06-23 1981-06-23 Photomask

Publications (1)

Publication Number Publication Date
JPS57212447A true JPS57212447A (en) 1982-12-27

Family

ID=14206743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9797881A Pending JPS57212447A (en) 1981-06-23 1981-06-23 Photomask

Country Status (1)

Country Link
JP (1) JPS57212447A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0207528A2 (en) * 1985-07-05 1987-01-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Process of producing a photomask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0207528A2 (en) * 1985-07-05 1987-01-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Process of producing a photomask

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