JPS56168654A - Photomask - Google Patents

Photomask

Info

Publication number
JPS56168654A
JPS56168654A JP7223280A JP7223280A JPS56168654A JP S56168654 A JPS56168654 A JP S56168654A JP 7223280 A JP7223280 A JP 7223280A JP 7223280 A JP7223280 A JP 7223280A JP S56168654 A JPS56168654 A JP S56168654A
Authority
JP
Japan
Prior art keywords
pattern
substrate
photomask
glass
micropattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7223280A
Other languages
Japanese (ja)
Inventor
Yoshihiro Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7223280A priority Critical patent/JPS56168654A/en
Publication of JPS56168654A publication Critical patent/JPS56168654A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To eliminate the interference action of light on a photoresist on a semiconductor substrate or the like and to enable the formation of a micropattern by forming convex lenses at the pattern-free parts of a photomask substrate having a formed prescribed metallic film pattern. CONSTITUTION:A prescribed metallic film pattern 5 is formed on a glass substrate 4, and by vapor-depositing glass on the pattern 5-free parts of the substrate 4 by an ion beam vapor-deposition method or other method, convex lenses 5b are formed by the surface tension of glass. When the resulting photomask 6 is exposed at a suitable distance from a photoresist 3 laid on an insulating film 2 on a semiconductor substrate 1 as shown by the arrows, no interference action of light is caused, and a micropattern 3a which is smaller than the pattern of the mask 6 is formed. Thus, the manufactured photomask 6 gives the resist pattern 3a of high accuracy required to make holes such as windows for electrodes in the film 2.
JP7223280A 1980-05-30 1980-05-30 Photomask Pending JPS56168654A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7223280A JPS56168654A (en) 1980-05-30 1980-05-30 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7223280A JPS56168654A (en) 1980-05-30 1980-05-30 Photomask

Publications (1)

Publication Number Publication Date
JPS56168654A true JPS56168654A (en) 1981-12-24

Family

ID=13483313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7223280A Pending JPS56168654A (en) 1980-05-30 1980-05-30 Photomask

Country Status (1)

Country Link
JP (1) JPS56168654A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576848A (en) * 1980-06-13 1982-01-13 Matsushita Electric Ind Co Ltd Photomask and its preparation
JPS58173744A (en) * 1982-04-05 1983-10-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Mask
JPS62291660A (en) * 1986-06-10 1987-12-18 Nec Corp Production of semiconductor device
EP0383534A2 (en) * 1989-02-13 1990-08-22 Kabushiki Kaisha Toshiba Exposure mask, method of manufacturing the same, and exposure method using the same
JPH02248949A (en) * 1989-03-22 1990-10-04 Toshiba Corp Photomask
JPH04296858A (en) * 1991-03-27 1992-10-21 Sharp Corp Photomask and projecting light exposure mechanisn using photomask thereof
JP2009277900A (en) * 2008-05-15 2009-11-26 V Technology Co Ltd Exposure device and photomask
WO2010070988A1 (en) * 2008-12-16 2010-06-24 株式会社ブイ・テクノロジー Method for forming projected pattern, exposure apparatus and photomask
WO2011052060A1 (en) * 2009-10-29 2011-05-05 株式会社ブイ・テクノロジー Exposure device and photo mask
CN102650820A (en) * 2011-10-31 2012-08-29 北京京东方光电科技有限公司 Mask frame and light curing method

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576848A (en) * 1980-06-13 1982-01-13 Matsushita Electric Ind Co Ltd Photomask and its preparation
JPS6223861B2 (en) * 1980-06-13 1987-05-26 Matsushita Electric Ind Co Ltd
JPS58173744A (en) * 1982-04-05 1983-10-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Mask
JPS6259296B2 (en) * 1982-04-05 1987-12-10 Intaanashonaru Bijinesu Mashiinzu Corp
JPS62291660A (en) * 1986-06-10 1987-12-18 Nec Corp Production of semiconductor device
US5234780A (en) * 1989-02-13 1993-08-10 Kabushiki Kaisha Toshiba Exposure mask, method of manufacturing the same, and exposure method using the same
EP0383534A2 (en) * 1989-02-13 1990-08-22 Kabushiki Kaisha Toshiba Exposure mask, method of manufacturing the same, and exposure method using the same
JPH02248949A (en) * 1989-03-22 1990-10-04 Toshiba Corp Photomask
JPH04296858A (en) * 1991-03-27 1992-10-21 Sharp Corp Photomask and projecting light exposure mechanisn using photomask thereof
US5441835A (en) * 1991-03-27 1995-08-15 Sharp Kabushiki Kaisha Photomask and projection exposure mechanism using the same
JP2009277900A (en) * 2008-05-15 2009-11-26 V Technology Co Ltd Exposure device and photomask
WO2010070988A1 (en) * 2008-12-16 2010-06-24 株式会社ブイ・テクノロジー Method for forming projected pattern, exposure apparatus and photomask
US8293434B2 (en) 2008-12-16 2012-10-23 V Technology Co., Ltd. Method for forming convex pattern, exposure apparatus and photomask
JP5495135B2 (en) * 2008-12-16 2014-05-21 株式会社ブイ・テクノロジー Convex pattern forming method, exposure apparatus, and photomask
WO2011052060A1 (en) * 2009-10-29 2011-05-05 株式会社ブイ・テクノロジー Exposure device and photo mask
CN102650820A (en) * 2011-10-31 2012-08-29 北京京东方光电科技有限公司 Mask frame and light curing method

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