JPS5445102A - Undulation pattern forming method - Google Patents

Undulation pattern forming method

Info

Publication number
JPS5445102A
JPS5445102A JP11202577A JP11202577A JPS5445102A JP S5445102 A JPS5445102 A JP S5445102A JP 11202577 A JP11202577 A JP 11202577A JP 11202577 A JP11202577 A JP 11202577A JP S5445102 A JPS5445102 A JP S5445102A
Authority
JP
Japan
Prior art keywords
resist
layer
evaporated
photo resist
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11202577A
Other languages
Japanese (ja)
Inventor
Yuri Shima
Toshio Yada
Atsushi Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11202577A priority Critical patent/JPS5445102A/en
Publication of JPS5445102A publication Critical patent/JPS5445102A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/261—Preparing a master, e.g. exposing photoresist, electroforming

Abstract

PURPOSE:To enable mask patterns of inverted trapezoidal form of photo resist suitable for lift-off method to be formed on a signal recording medium such as video disc original plate by recording on positive type photo resist through laser exposure. CONSTITUTION:A metal layer 8 such as of Cr of surface reflectance 60% is evaporated on a glass substrate 1 of good flatness. Over this is coated positive type photo resist 2, which is then prebaked. Next, the laser light 9 from an Ar laser is radiated to the moving substrate 1, whereby signal recording is effected on the resist 2. The portions having been exposed by the light 9 are removed by developing, whereby photo resist patterns 10 of inverted trapezoidal form an formed. Next, a metal layer 6 such as of Al is evaporated on the layer 8 and the resist 2. Thereafter, the resist 2 is removed and the layer 6 by lift-off on the resist 2 is peeled, then the evaporated metal undulation patterns 7 are obtained on the layer 8.
JP11202577A 1977-09-16 1977-09-16 Undulation pattern forming method Pending JPS5445102A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11202577A JPS5445102A (en) 1977-09-16 1977-09-16 Undulation pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11202577A JPS5445102A (en) 1977-09-16 1977-09-16 Undulation pattern forming method

Publications (1)

Publication Number Publication Date
JPS5445102A true JPS5445102A (en) 1979-04-10

Family

ID=14576103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11202577A Pending JPS5445102A (en) 1977-09-16 1977-09-16 Undulation pattern forming method

Country Status (1)

Country Link
JP (1) JPS5445102A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142423A (en) * 1983-02-03 1984-08-15 Mitsutoyo Mfg Co Ltd Method for marking graduation or the like
JPS62264686A (en) * 1986-01-14 1987-11-17 Citizen Watch Co Ltd Formation of mim nonlinear element
JP2007305276A (en) * 2006-05-15 2007-11-22 Sharp Corp Method for forming fine pattern, stamper for optical disk, substrate for optical disk, and optical disk medium
US7812355B2 (en) 2004-03-03 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
US7939888B2 (en) 2004-01-26 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Display device and television device using the same
US8158517B2 (en) * 2004-06-28 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing wiring substrate, thin film transistor, display device and television device
US8222636B2 (en) 2004-03-24 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142423A (en) * 1983-02-03 1984-08-15 Mitsutoyo Mfg Co Ltd Method for marking graduation or the like
JPS62264686A (en) * 1986-01-14 1987-11-17 Citizen Watch Co Ltd Formation of mim nonlinear element
US7939888B2 (en) 2004-01-26 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Display device and television device using the same
US8518760B2 (en) 2004-01-26 2013-08-27 Semiconductor Energy Co., Ltd. Display device, method for manufacturing thereof, and television device
US7812355B2 (en) 2004-03-03 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
US8222636B2 (en) 2004-03-24 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
US8158517B2 (en) * 2004-06-28 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing wiring substrate, thin film transistor, display device and television device
JP2007305276A (en) * 2006-05-15 2007-11-22 Sharp Corp Method for forming fine pattern, stamper for optical disk, substrate for optical disk, and optical disk medium
JP4647542B2 (en) * 2006-05-15 2011-03-09 シャープ株式会社 Method for forming fine pattern

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